Optically Integrated InP-Si3N4 Hybrid Laser

Youwen Fan; Jörn P. Epping; Ruud M. Oldenbeuving; Chris G.H. Roeloffzen; Marcel Hoekman; Ronald Dekker; René G. Heideman; Peter J.M. van der Slot; Klaus-J. Boller

doi:10.1109/JPHOT.2016.2633402

Optically Integrated InP-Si₃N₄ Hybrid Laser

Youwen Fan
, Jörn P. Epping
, Ruud M. Oldenbeuving
, Chris G.H. Roeloffzen
, Marcel Hoekman
, Ronald Dekker
, René G. Heideman
, Peter J.M. van der Slot
, Klaus-J. Boller

Research output: Contribution to journal › Article › Academic › peer-review

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373 Downloads (Pure)

Abstract

We describe the first demonstration and characterization of an optically integrated InP-Si₃N₄ hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si₃N₄ based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

Original language	English
Article number	1505111
Pages (from-to)	-
Number of pages	12
Journal	IEEE photonics journal
Volume	8
Issue number	6
DOIs	https://doi.org/10.1109/JPHOT.2016.2633402
Publication status	Published - 1 Dec 2016

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10.1109/JPHOT.2016.2633402

Fan2016opticalFinal published version, 1.05 MB

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@article{a1ce9f0e629c4b6191a324f4a8856990,

title = "Optically Integrated InP-Si3N4 Hybrid Laser",

abstract = "We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.",

author = "Youwen Fan and Epping, \{J{\"o}rn P.\} and Oldenbeuving, \{Ruud M.\} and Roeloffzen, \{Chris G.H.\} and Marcel Hoekman and Ronald Dekker and Heideman, \{Ren{\'e} G.\} and \{van der Slot\}, \{Peter J.M.\} and Klaus-J. Boller",

year = "2016",

month = dec,

day = "1",

doi = "10.1109/JPHOT.2016.2633402",

language = "English",

volume = "8",

pages = "--",

journal = "IEEE photonics journal",

issn = "1943-0655",

publisher = "IEEE",

number = "6",

}

TY - JOUR

T1 - Optically Integrated InP-Si3N4 Hybrid Laser

AU - Fan, Youwen

AU - Epping, Jörn P.

AU - Oldenbeuving, Ruud M.

AU - Roeloffzen, Chris G.H.

AU - Hoekman, Marcel

AU - Dekker, Ronald

AU - Heideman, René G.

AU - van der Slot, Peter J.M.

AU - Boller, Klaus-J.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

AB - We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

U2 - 10.1109/JPHOT.2016.2633402

DO - 10.1109/JPHOT.2016.2633402

M3 - Article

SN - 1943-0655

VL - 8

SP - -

JO - IEEE photonics journal

JF - IEEE photonics journal

IS - 6

M1 - 1505111

ER -

Optically Integrated InP-Si3N4 Hybrid Laser

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Optically Integrated InP-Si₃N₄ Hybrid Laser