Optimisation of the base-collector doping profile for high-frequency distortion

Wibo Van Noort; L. C.N. De Vreede; L. K. Nanver; H. C. De Graaff; J. W. Slotboom

Optimisation of the base-collector doping profile for high-frequency distortion

Wibo Van Noort^*, L. C.N. De Vreede, L. K. Nanver, H. C. De Graaff, J. W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

A circuit generalisation is introduced to enable technology evaluation of distortion. It is shown that a retrograded SIC (Selective Implanted Collector) in a NPN-bipolar transistor has a linearised collector base capacitance at higher current densities. This allows downscaling of the device without sacrificing collector emitter breakdown or cutoff-frequency.

Original language	English
Title of host publication	ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
Editors	A. Touboul, Y. Danto, H. Grunbacher
Publisher	IEEE
Pages	496-499
Number of pages	4
ISBN (Print)	2-86332-234-6
Publication status	Published - 1 Jan 1998
Externally published	Yes
Event	28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France Duration: 8 Sept 1998 → 10 Sept 1998 Conference number: 28

Conference

Conference	28th European Solid-State Device Research Conference, ESSDERC 1998
Abbreviated title	ESSDERC 1998
Country/Territory	France
City	Bordeaux
Period	8/09/98 → 10/09/98

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Van Noort, W., De Vreede, L. C. N., Nanver, L. K., De Graaff, H. C., & Slotboom, J. W. (1998). Optimisation of the base-collector doping profile for high-frequency distortion. In A. Touboul, Y. Danto, & H. Grunbacher (Eds.), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference (pp. 496-499). Article 1503597 IEEE. https://ieeexplore.ieee.org/document/1503597

@inproceedings{8b9389158b694cada5cd5136c86e99b3,

title = "Optimisation of the base-collector doping profile for high-frequency distortion",

abstract = "A circuit generalisation is introduced to enable technology evaluation of distortion. It is shown that a retrograded SIC (Selective Implanted Collector) in a NPN-bipolar transistor has a linearised collector base capacitance at higher current densities. This allows downscaling of the device without sacrificing collector emitter breakdown or cutoff-frequency.",

author = "{Van Noort}, Wibo and {De Vreede}, {L. C.N.} and Nanver, {L. K.} and {De Graaff}, {H. C.} and Slotboom, {J. W.}",

year = "1998",

month = jan,

day = "1",

language = "English",

isbn = "2-86332-234-6",

pages = "496--499",

editor = "A. Touboul and Y. Danto and H. Grunbacher",

booktitle = "ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference",

publisher = "IEEE",

address = "United States",

note = "28th European Solid-State Device Research Conference, ESSDERC 1998, ESSDERC 1998 ; Conference date: 08-09-1998 Through 10-09-1998",

}

Van Noort, W, De Vreede, LCN, Nanver, LK, De Graaff, HC & Slotboom, JW 1998, Optimisation of the base-collector doping profile for high-frequency distortion. in A Touboul, Y Danto & H Grunbacher (eds), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference., 1503597, IEEE, pp. 496-499, 28th European Solid-State Device Research Conference, ESSDERC 1998, Bordeaux, France, 8/09/98. <https://ieeexplore.ieee.org/document/1503597>

Optimisation of the base-collector doping profile for high-frequency distortion. / Van Noort, Wibo; De Vreede, L. C.N.; Nanver, L. K. et al.
ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference. ed. / A. Touboul; Y. Danto; H. Grunbacher. IEEE, 1998. p. 496-499 1503597.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Optimisation of the base-collector doping profile for high-frequency distortion

AU - Van Noort, Wibo

AU - De Vreede, L. C.N.

AU - Nanver, L. K.

AU - De Graaff, H. C.

AU - Slotboom, J. W.

N1 - Conference code: 28

PY - 1998/1/1

Y1 - 1998/1/1

N2 - A circuit generalisation is introduced to enable technology evaluation of distortion. It is shown that a retrograded SIC (Selective Implanted Collector) in a NPN-bipolar transistor has a linearised collector base capacitance at higher current densities. This allows downscaling of the device without sacrificing collector emitter breakdown or cutoff-frequency.

AB - A circuit generalisation is introduced to enable technology evaluation of distortion. It is shown that a retrograded SIC (Selective Implanted Collector) in a NPN-bipolar transistor has a linearised collector base capacitance at higher current densities. This allows downscaling of the device without sacrificing collector emitter breakdown or cutoff-frequency.

UR - http://www.scopus.com/inward/record.url?scp=0002600691&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0002600691

SN - 2-86332-234-6

SP - 496

EP - 499

BT - ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference

A2 - Touboul, A.

A2 - Danto, Y.

A2 - Grunbacher, H.

PB - IEEE

T2 - 28th European Solid-State Device Research Conference, ESSDERC 1998

Y2 - 8 September 1998 through 10 September 1998

ER -

Optimisation of the base-collector doping profile for high-frequency distortion

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