With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPN's have been optimized for operation in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the épi. A low-stress silicon rich nitride layer is proven effective as surface isolation before contact window dip-etch.
|Number of pages||3|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Dec 1996|