Optimization of fully-implanted NPN's for high-frequency operation

L.K. Nanver*, E.J.G. Goudena, H.W. Van Zeijl

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

21 Citations (Scopus)
6 Downloads (Pure)

Abstract

With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPN's have been optimized for operation in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the épi. A low-stress silicon rich nitride layer is proven effective as surface isolation before contact window dip-etch.

Original languageEnglish
Pages (from-to)1038-1040
Number of pages3
JournalIEEE transactions on electron devices
Volume43
Issue number6
DOIs
Publication statusPublished - 1 Dec 1996
Externally publishedYes

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