Optimization of fully-implanted NPN's for high-frequency operation

L.K. Nanver; E.J.G. Goudena; H.W. Van Zeijl

doi:10.1109/16.502142

Optimization of fully-implanted NPN's for high-frequency operation

L.K. Nanver^*, E.J.G. Goudena, H.W. Van Zeijl

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

22 Citations (Scopus)

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Abstract

With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPN's have been optimized for operation in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the épi. A low-stress silicon rich nitride layer is proven effective as surface isolation before contact window dip-etch.

Original language	English
Pages (from-to)	1038-1040
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	43
Issue number	6
DOIs	https://doi.org/10.1109/16.502142
Publication status	Published - 1 Dec 1996
Externally published	Yes

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title = "Optimization of fully-implanted NPN's for high-frequency operation",

abstract = "With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPN's have been optimized for operation in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the {\'e}pi. A low-stress silicon rich nitride layer is proven effective as surface isolation before contact window dip-etch.",

author = "L.K. Nanver and E.J.G. Goudena and {Van Zeijl}, H.W.",

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AU - Nanver, L.K.

AU - Goudena, E.J.G.

AU - Van Zeijl, H.W.

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AB - With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPN's have been optimized for operation in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the épi. A low-stress silicon rich nitride layer is proven effective as surface isolation before contact window dip-etch.

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DO - 10.1109/16.502142

M3 - Article

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

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Optimization of fully-implanted NPN's for high-frequency operation

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