Optimization of Low-Loss AL2O3 Waveguide Fabrication for Application in Active Integrated Optical Devices

K. Wörhoff, F. Ay, M. Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    15 Citations (Scopus)
    216 Downloads (Pure)


    In this paper we will present the fabrication and properties of reactively co-sputtered AL2O3 layers, being a very promising host material for active integrated optics applications such as rare-earth ion doped laser devices. The process optimization towards a reactive co-sputtering process, which resulted in stable, target condition-independent deposition of AL2O3AL2 with high optical quality will be discussed in detail. The loss value of as-deposited optical waveguides sputtered by the optimized process has been measured. The loss in the near infrared wavelength range was 0.3 dB/cm. Furthermore AL2O3 material hosts fabricated by sputtering techniques are compatible with Si-based integrated optical technology and allow for uniform deposition over a large substrate area.
    Original languageEnglish
    Title of host publicationScience and Technology of Dielectrics for Active and Passive Photonic Devices
    EditorsP. Masscher, K. Wörhoff, D. Misra
    Place of PublicationPennington, NJ
    PublisherThe Electrochemical Society Inc.
    Number of pages10
    ISBN (Print)1-56677-515-9
    Publication statusPublished - 2006
    Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
    Duration: 29 Oct 20063 Nov 2006

    Publication series

    NameECS Transactions
    PublisherElectrochemical Society, Inc.


    Conference210th Electrochemical Society Meeting, ECS 2006
    Abbreviated titleECS 2006


    • IOMS-APD: Advanced Photonic Devices


    Dive into the research topics of 'Optimization of Low-Loss AL2O3 Waveguide Fabrication for Application in Active Integrated Optical Devices'. Together they form a unique fingerprint.

    Cite this