In this paper we will present the fabrication and properties of reactively co-sputtered AL2O3 layers, being a very promising host material for active integrated optics applications such as rare-earth ion doped laser devices. The process optimization towards a reactive co-sputtering process, which resulted in stable, target condition-independent deposition of AL2O3AL2 with high optical quality will be discussed in detail. The loss value of as-deposited optical waveguides sputtered by the optimized process has been measured. The loss in the near infrared wavelength range was 0.3 dB/cm. Furthermore AL2O3 material hosts fabricated by sputtering techniques are compatible with Si-based integrated optical technology and allow for uniform deposition over a large substrate area.
|Publisher||Electrochemical Society, Inc.|
|Conference||210th Electrochemical Society Meeting, ECS 2006|
|Abbreviated title||ECS 2006|
|Period||29/10/06 → 3/11/06|
- IOMS-APD: Advanced Photonic Devices