Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors

J.B. Rem, M.C.V. de Leuw, J. Holleman, J.F. Verweij

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	Undefined
Title of host publication	Proceedings 190th Electrochemical Society Meeting
Place of Publication	San Antonio Texas USA
Pages	197-
Publication status	Published - 26 Jan 1997

Keywords

@inproceedings{bd6cea4f2edf407ebf94b928183c6862,

title = "Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors",

keywords = "METIS-113862",

author = "J.B. Rem and {de Leuw}, M.C.V. and J. Holleman and J.F. Verweij",

year = "1997",

month = jan,

day = "26",

language = "Undefined",

pages = "197--",

booktitle = "Proceedings 190th Electrochemical Society Meeting",

}

TY - GEN

T1 - Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors

AU - Rem, J.B.

AU - de Leuw, M.C.V.

AU - Holleman, J.

AU - Verweij, J.F.

PY - 1997/1/26

Y1 - 1997/1/26

KW - METIS-113862

M3 - Conference contribution

SP - 197-

BT - Proceedings 190th Electrochemical Society Meeting

CY - San Antonio Texas USA

ER -