Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors

J.B. Rem, M.C.V. de Leuw, J. Holleman, J.F. Verweij

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings 190th Electrochemical Society Meeting
    Place of PublicationSan Antonio Texas USA
    Pages197-
    Publication statusPublished - 26 Jan 1997

    Keywords

    • METIS-113862

    Cite this

    Rem, J. B., de Leuw, M. C. V., Holleman, J., & Verweij, J. F. (1997). Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors. In Proceedings 190th Electrochemical Society Meeting (pp. 197-). San Antonio Texas USA.
    Rem, J.B. ; de Leuw, M.C.V. ; Holleman, J. ; Verweij, J.F. / Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors. Proceedings 190th Electrochemical Society Meeting. San Antonio Texas USA, 1997. pp. 197-
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    title = "Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors",
    keywords = "METIS-113862",
    author = "J.B. Rem and {de Leuw}, M.C.V. and J. Holleman and J.F. Verweij",
    year = "1997",
    month = "1",
    day = "26",
    language = "Undefined",
    pages = "197--",
    booktitle = "Proceedings 190th Electrochemical Society Meeting",

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    Rem, JB, de Leuw, MCV, Holleman, J & Verweij, JF 1997, Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors. in Proceedings 190th Electrochemical Society Meeting. San Antonio Texas USA, pp. 197-.

    Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors. / Rem, J.B.; de Leuw, M.C.V.; Holleman, J.; Verweij, J.F.

    Proceedings 190th Electrochemical Society Meeting. San Antonio Texas USA, 1997. p. 197-.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors

    AU - Rem, J.B.

    AU - de Leuw, M.C.V.

    AU - Holleman, J.

    AU - Verweij, J.F.

    PY - 1997/1/26

    Y1 - 1997/1/26

    KW - METIS-113862

    M3 - Conference contribution

    SP - 197-

    BT - Proceedings 190th Electrochemical Society Meeting

    CY - San Antonio Texas USA

    ER -

    Rem JB, de Leuw MCV, Holleman J, Verweij JF. Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors. In Proceedings 190th Electrochemical Society Meeting. San Antonio Texas USA. 1997. p. 197-