Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors

J.B. Rem, M.C.V. de Leuw, J. Holleman, J.F. Verweij

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings 190th Electrochemical Society Meeting
    Place of PublicationSan Antonio Texas USA
    Pages197-
    Publication statusPublished - 26 Jan 1997

    Keywords

    • METIS-113862

    Cite this

    Rem, J. B., de Leuw, M. C. V., Holleman, J., & Verweij, J. F. (1997). Optimization of Si and GexS1-x crystallization with furnace and rapid thermal anneals for thin film transistors. In Proceedings 190th Electrochemical Society Meeting (pp. 197-). San Antonio Texas USA.