Optimization of the perimeter doping of ultrashallow p+-n --n- photodiodes

T. Knežević*, T. Suligoj, A. Šakić, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
1 Downloads (Pure)

Abstract

Ultrashallow p+-n--n- silicon photodiodes, fabricated by a pure boron deposition technology, show excellent performance for detection of Deep Ultra Violet (DUV) radiation due to the nanometer deep pn-junctions. The dark current of photodiode is degraded by the damage of the silicon/oxide interface at the diode perimeter region caused by DUV radiation. Reducing the depletion region width across the p+-n --n- junction at the silicon/oxide interface will also invariably increase the electric field, reducing the breakdown voltage and increasing the perimeter component of the junction capacitance. In this paper, the trade-off between the depletion region width, breakdown voltage and junction capacitance is examined for ultrashallow p+-n--n - photodiodes where an additional ultrashallow doped p-region is introduced as an extension to the p-type guard rings. An optimal doping profile is proposed for the added p-region to obtain minimal degradation of electric characteristics for peak doping of 1018 cm3, 5 10 18 cm3 and 5 1019 cm3 at junction depths of 50 nm, 10 nm and 2 nm, respectively, and a distance of 0.5 m between the added p-region and the surrounding n- channel stop.

Original languageEnglish
Title of host publicationMIPRO 2011 - 34th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings
Pages44-48
Number of pages5
Publication statusPublished - 6 Sep 2011
Externally publishedYes
Event34th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2011 - Opatija, Croatia
Duration: 23 May 201127 May 2011
Conference number: 34

Conference

Conference34th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2011
Abbreviated titleMIPRO 2011
CountryCroatia
CityOpatija
Period23/05/1127/05/11

Fingerprint Dive into the research topics of 'Optimization of the perimeter doping of ultrashallow p<sup>+</sup>-n <sup>-</sup>-n<sup>-</sup> photodiodes'. Together they form a unique fingerprint.

Cite this