Optimization of the perimeter doping of ultrashallow p⁺-n ^--n^- photodiodes

Ultrashallow p⁺-n^--n^- silicon photodiodes, fabricated by a pure boron deposition technology, show excellent performance for detection of Deep Ultra Violet (DUV) radiation due to the nanometer deep pn-junctions. The dark current of photodiode is degraded by the damage of the silicon/oxide interface at the diode perimeter region caused by DUV radiation. Reducing the depletion region width across the p⁺-n ^--n^- junction at the silicon/oxide interface will also invariably increase the electric field, reducing the breakdown voltage and increasing the perimeter component of the junction capacitance. In this paper, the trade-off between the depletion region width, breakdown voltage and junction capacitance is examined for ultrashallow p⁺-n^--n ^- photodiodes where an additional ultrashallow doped p-region is introduced as an extension to the p-type guard rings. An optimal doping profile is proposed for the added p-region to obtain minimal degradation of electric characteristics for peak doping of 10¹⁸ cm³, 5 10 ¹⁸ cm³ and 5 10¹⁹ cm³ at junction depths of 50 nm, 10 nm and 2 nm, respectively, and a distance of 0.5 m between the added p-region and the surrounding n^- channel stop.