Optimized deposition and structuring of reactively co-sputtered Al2O3:Er waveguide layers with net optical gain

J. Bradley, D. Geskus, T. Blaauwendraat, F. Ay, Kerstin Worhoff, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)
23 Downloads (Pure)

Abstract

Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching have been optimized, resulting in channel waveguides in the as-deposited layers with optical propagation losses as low as 0.21 dB/cm. For active functionality, Erdoped $Al_2O_3$ layers have also been deposited by co-sputtering from a metallic Er target. At relevant dopant levels ($~10^{20}$ $cm^{-3})$ lifetimes of the $^{4}I_{13/2}$ level up to 7 ms have been measured and net optical gain of 0.7 dB/cm has been obtained in a 700-nm thick Erdoped $Al_2O_3$ waveguide. Investigation of active devices, such as lasers and amplifiers, exploiting the developed technology is on-going.
Original languageUndefined
Title of host publication12th Annual Symposium IEEE/LEOS Benelux
EditorsPh. Emplit, M. Delqué, S.-P. Gorza, P. Knockaert, X Leijtens
Place of PublicationBrussels, Belgium
PublisherIEEE/LEOS Benelux Chapter
Pages107-110
Number of pages4
ISBN (Print)978-2-9600753-0-4
Publication statusPublished - 17 Dec 2007
Event12th Annual Symposium IEEE/LEOS Benelux Chapter 2007 - Brussels, Belgium, Brussels, Belgium
Duration: 17 Dec 200718 Dec 2007

Publication series

Name
PublisherIEEE LEOS Benelux Chapter
Number7

Conference

Conference12th Annual Symposium IEEE/LEOS Benelux Chapter 2007
CountryBelgium
CityBrussels
Period17/12/0718/12/07
Other17-18 Dec 2007

Keywords

  • IOMS-APD: Active Photonic Devices
  • EWI-11857
  • METIS-245993
  • EC Grant Agreement nr.: FP6/017501
  • IR-64608

Cite this

Bradley, J., Geskus, D., Blaauwendraat, T., Ay, F., Worhoff, K., & Pollnau, M. (2007). Optimized deposition and structuring of reactively co-sputtered Al2O3:Er waveguide layers with net optical gain. In P. Emplit, M. Delqué, S-P. Gorza, P. Knockaert, & X. Leijtens (Eds.), 12th Annual Symposium IEEE/LEOS Benelux (pp. 107-110). Brussels, Belgium: IEEE/LEOS Benelux Chapter.
Bradley, J. ; Geskus, D. ; Blaauwendraat, T. ; Ay, F. ; Worhoff, Kerstin ; Pollnau, Markus. / Optimized deposition and structuring of reactively co-sputtered Al2O3:Er waveguide layers with net optical gain. 12th Annual Symposium IEEE/LEOS Benelux. editor / Ph. Emplit ; M. Delqué ; S.-P. Gorza ; P. Knockaert ; X Leijtens. Brussels, Belgium : IEEE/LEOS Benelux Chapter, 2007. pp. 107-110
@inproceedings{34e20697c6544e44bd7b5f5679e7d112,
title = "Optimized deposition and structuring of reactively co-sputtered Al2O3:Er waveguide layers with net optical gain",
abstract = "Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching have been optimized, resulting in channel waveguides in the as-deposited layers with optical propagation losses as low as 0.21 dB/cm. For active functionality, Erdoped $Al_2O_3$ layers have also been deposited by co-sputtering from a metallic Er target. At relevant dopant levels ($~10^{20}$ $cm^{-3})$ lifetimes of the $^{4}I_{13/2}$ level up to 7 ms have been measured and net optical gain of 0.7 dB/cm has been obtained in a 700-nm thick Erdoped $Al_2O_3$ waveguide. Investigation of active devices, such as lasers and amplifiers, exploiting the developed technology is on-going.",
keywords = "IOMS-APD: Active Photonic Devices, EWI-11857, METIS-245993, EC Grant Agreement nr.: FP6/017501, IR-64608",
author = "J. Bradley and D. Geskus and T. Blaauwendraat and F. Ay and Kerstin Worhoff and Markus Pollnau",
year = "2007",
month = "12",
day = "17",
language = "Undefined",
isbn = "978-2-9600753-0-4",
publisher = "IEEE/LEOS Benelux Chapter",
number = "7",
pages = "107--110",
editor = "Ph. Emplit and M. Delqu{\'e} and S.-P. Gorza and P. Knockaert and X Leijtens",
booktitle = "12th Annual Symposium IEEE/LEOS Benelux",

}

Bradley, J, Geskus, D, Blaauwendraat, T, Ay, F, Worhoff, K & Pollnau, M 2007, Optimized deposition and structuring of reactively co-sputtered Al2O3:Er waveguide layers with net optical gain. in P Emplit, M Delqué, S-P Gorza, P Knockaert & X Leijtens (eds), 12th Annual Symposium IEEE/LEOS Benelux. IEEE/LEOS Benelux Chapter, Brussels, Belgium, pp. 107-110, 12th Annual Symposium IEEE/LEOS Benelux Chapter 2007, Brussels, Belgium, 17/12/07.

Optimized deposition and structuring of reactively co-sputtered Al2O3:Er waveguide layers with net optical gain. / Bradley, J.; Geskus, D.; Blaauwendraat, T.; Ay, F.; Worhoff, Kerstin; Pollnau, Markus.

12th Annual Symposium IEEE/LEOS Benelux. ed. / Ph. Emplit; M. Delqué; S.-P. Gorza; P. Knockaert; X Leijtens. Brussels, Belgium : IEEE/LEOS Benelux Chapter, 2007. p. 107-110.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Optimized deposition and structuring of reactively co-sputtered Al2O3:Er waveguide layers with net optical gain

AU - Bradley, J.

AU - Geskus, D.

AU - Blaauwendraat, T.

AU - Ay, F.

AU - Worhoff, Kerstin

AU - Pollnau, Markus

PY - 2007/12/17

Y1 - 2007/12/17

N2 - Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching have been optimized, resulting in channel waveguides in the as-deposited layers with optical propagation losses as low as 0.21 dB/cm. For active functionality, Erdoped $Al_2O_3$ layers have also been deposited by co-sputtering from a metallic Er target. At relevant dopant levels ($~10^{20}$ $cm^{-3})$ lifetimes of the $^{4}I_{13/2}$ level up to 7 ms have been measured and net optical gain of 0.7 dB/cm has been obtained in a 700-nm thick Erdoped $Al_2O_3$ waveguide. Investigation of active devices, such as lasers and amplifiers, exploiting the developed technology is on-going.

AB - Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching have been optimized, resulting in channel waveguides in the as-deposited layers with optical propagation losses as low as 0.21 dB/cm. For active functionality, Erdoped $Al_2O_3$ layers have also been deposited by co-sputtering from a metallic Er target. At relevant dopant levels ($~10^{20}$ $cm^{-3})$ lifetimes of the $^{4}I_{13/2}$ level up to 7 ms have been measured and net optical gain of 0.7 dB/cm has been obtained in a 700-nm thick Erdoped $Al_2O_3$ waveguide. Investigation of active devices, such as lasers and amplifiers, exploiting the developed technology is on-going.

KW - IOMS-APD: Active Photonic Devices

KW - EWI-11857

KW - METIS-245993

KW - EC Grant Agreement nr.: FP6/017501

KW - IR-64608

M3 - Conference contribution

SN - 978-2-9600753-0-4

SP - 107

EP - 110

BT - 12th Annual Symposium IEEE/LEOS Benelux

A2 - Emplit, Ph.

A2 - Delqué, M.

A2 - Gorza, S.-P.

A2 - Knockaert, P.

A2 - Leijtens, X

PB - IEEE/LEOS Benelux Chapter

CY - Brussels, Belgium

ER -

Bradley J, Geskus D, Blaauwendraat T, Ay F, Worhoff K, Pollnau M. Optimized deposition and structuring of reactively co-sputtered Al2O3:Er waveguide layers with net optical gain. In Emplit P, Delqué M, Gorza S-P, Knockaert P, Leijtens X, editors, 12th Annual Symposium IEEE/LEOS Benelux. Brussels, Belgium: IEEE/LEOS Benelux Chapter. 2007. p. 107-110