Optimized deposition and structuring of reactively co-sputtered Al2O3:Er waveguide layers with net optical gain

J. Bradley, D. Geskus, T. Blaauwendraat, F. Ay, Kerstin Worhoff, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    5 Citations (Scopus)
    32 Downloads (Pure)


    Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching have been optimized, resulting in channel waveguides in the as-deposited layers with optical propagation losses as low as 0.21 dB/cm. For active functionality, Erdoped $Al_2O_3$ layers have also been deposited by co-sputtering from a metallic Er target. At relevant dopant levels ($~10^{20}$ $cm^{-3})$ lifetimes of the $^{4}I_{13/2}$ level up to 7 ms have been measured and net optical gain of 0.7 dB/cm has been obtained in a 700-nm thick Erdoped $Al_2O_3$ waveguide. Investigation of active devices, such as lasers and amplifiers, exploiting the developed technology is on-going.
    Original languageUndefined
    Title of host publication12th Annual Symposium IEEE/LEOS Benelux
    EditorsPh. Emplit, M. Delqué, S.-P. Gorza, P. Knockaert, X Leijtens
    Place of PublicationBrussels, Belgium
    PublisherIEEE/LEOS Benelux Chapter
    Number of pages4
    ISBN (Print)978-2-9600753-0-4
    Publication statusPublished - 17 Dec 2007
    Event12th Annual Symposium IEEE/LEOS Benelux Chapter 2007 - Brussels, Belgium, Brussels, Belgium
    Duration: 17 Dec 200718 Dec 2007

    Publication series

    PublisherIEEE LEOS Benelux Chapter


    Conference12th Annual Symposium IEEE/LEOS Benelux Chapter 2007
    Other17-18 Dec 2007


    • IOMS-APD: Active Photonic Devices
    • EWI-11857
    • METIS-245993
    • EC Grant Agreement nr.: FP6/017501
    • IR-64608

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