Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

    Research output: Contribution to journalArticleAcademicpeer-review

    21 Citations (Scopus)

    Abstract

    This work presents the modeling of light emission from silicon based pþn junctions operating in avalanche breakdown. We revisit the photon emission process under the influence of relatively high electric fields in a reverse biased junction (>105 V/cm). The photon emission rate is described as a function of the electron temperature Te, which is computed from the spatial distribution of the electric field. The light emission spectra lie around the visible spectral range (k 300–850 nm), where the peak wavelength and the optical intensity are both doping level dependent. It is theoretically derived that a specific minimum geometrical width (170 nm) of the active region of avalanche is required, corresponding to a breakdown voltage of 5V, below which the rate of photon emission in the desired spectrum drops. The derived model is validated using experimental data obtained from ultra-shallow pþn junctions with low absorption through a nm-thin pþ region and surface coverage of solely 3 nm of pure boron. We observe a peak in the emission spectra near 580 nm and 650 nm for diodes with breakdown voltages 7V and 14 V, respectively, consistent with our model.
    Original languageUndefined
    Pages (from-to)1-10
    Number of pages10
    JournalJournal of applied physics
    Volume118
    DOIs
    Publication statusPublished - 18 Sep 2015

    Keywords

    • EWI-26285
    • IR-97707
    • METIS-312713

    Cite this

    @article{901eccb22c104e4eb06ec05064bfefc0,
    title = "Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions",
    abstract = "This work presents the modeling of light emission from silicon based p{\th}n junctions operating in avalanche breakdown. We revisit the photon emission process under the influence of relatively high electric fields in a reverse biased junction (>105 V/cm). The photon emission rate is described as a function of the electron temperature Te, which is computed from the spatial distribution of the electric field. The light emission spectra lie around the visible spectral range (k 300–850 nm), where the peak wavelength and the optical intensity are both doping level dependent. It is theoretically derived that a specific minimum geometrical width (170 nm) of the active region of avalanche is required, corresponding to a breakdown voltage of 5V, below which the rate of photon emission in the desired spectrum drops. The derived model is validated using experimental data obtained from ultra-shallow p{\th}n junctions with low absorption through a nm-thin p{\th} region and surface coverage of solely 3 nm of pure boron. We observe a peak in the emission spectra near 580 nm and 650 nm for diodes with breakdown voltages 7V and 14 V, respectively, consistent with our model.",
    keywords = "EWI-26285, IR-97707, METIS-312713",
    author = "Satadal Dutta and Hueting, {Raymond Josephus Engelbart} and Annema, {Anne J.} and Lin Qi and Nanver, {Lis Karen} and Jurriaan Schmitz",
    note = "eemcs-eprint-26285",
    year = "2015",
    month = "9",
    day = "18",
    doi = "10.1063/1.4931056",
    language = "Undefined",
    volume = "118",
    pages = "1--10",
    journal = "Journal of applied physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics",

    }

    Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions. / Dutta, Satadal; Hueting, Raymond Josephus Engelbart; Annema, Anne J.; Qi, Lin; Nanver, Lis Karen; Schmitz, Jurriaan.

    In: Journal of applied physics, Vol. 118, 18.09.2015, p. 1-10.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

    AU - Dutta, Satadal

    AU - Hueting, Raymond Josephus Engelbart

    AU - Annema, Anne J.

    AU - Qi, Lin

    AU - Nanver, Lis Karen

    AU - Schmitz, Jurriaan

    N1 - eemcs-eprint-26285

    PY - 2015/9/18

    Y1 - 2015/9/18

    N2 - This work presents the modeling of light emission from silicon based pþn junctions operating in avalanche breakdown. We revisit the photon emission process under the influence of relatively high electric fields in a reverse biased junction (>105 V/cm). The photon emission rate is described as a function of the electron temperature Te, which is computed from the spatial distribution of the electric field. The light emission spectra lie around the visible spectral range (k 300–850 nm), where the peak wavelength and the optical intensity are both doping level dependent. It is theoretically derived that a specific minimum geometrical width (170 nm) of the active region of avalanche is required, corresponding to a breakdown voltage of 5V, below which the rate of photon emission in the desired spectrum drops. The derived model is validated using experimental data obtained from ultra-shallow pþn junctions with low absorption through a nm-thin pþ region and surface coverage of solely 3 nm of pure boron. We observe a peak in the emission spectra near 580 nm and 650 nm for diodes with breakdown voltages 7V and 14 V, respectively, consistent with our model.

    AB - This work presents the modeling of light emission from silicon based pþn junctions operating in avalanche breakdown. We revisit the photon emission process under the influence of relatively high electric fields in a reverse biased junction (>105 V/cm). The photon emission rate is described as a function of the electron temperature Te, which is computed from the spatial distribution of the electric field. The light emission spectra lie around the visible spectral range (k 300–850 nm), where the peak wavelength and the optical intensity are both doping level dependent. It is theoretically derived that a specific minimum geometrical width (170 nm) of the active region of avalanche is required, corresponding to a breakdown voltage of 5V, below which the rate of photon emission in the desired spectrum drops. The derived model is validated using experimental data obtained from ultra-shallow pþn junctions with low absorption through a nm-thin pþ region and surface coverage of solely 3 nm of pure boron. We observe a peak in the emission spectra near 580 nm and 650 nm for diodes with breakdown voltages 7V and 14 V, respectively, consistent with our model.

    KW - EWI-26285

    KW - IR-97707

    KW - METIS-312713

    U2 - 10.1063/1.4931056

    DO - 10.1063/1.4931056

    M3 - Article

    VL - 118

    SP - 1

    EP - 10

    JO - Journal of applied physics

    JF - Journal of applied physics

    SN - 0021-8979

    ER -