Optocoupling in CMOS

V. Agarwal; S. Dutta; A.J. Annema; R.J.E. Hueting; J. Schmitz; M.-J. Lee; E. Charbon; B. Nauta

doi:10.1109/IEDM.2018.8614523

Optocoupling in CMOS

V. Agarwal, S. Dutta, A.J. Annema, R.J.E. Hueting, J. Schmitz, M.-J. Lee, E. Charbon, B. Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

14 Citations (Scopus)

370 Downloads (Pure)

Abstract

Abstract— For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal quantum efficiency (IQE) and high power consumption. For the first time, in this work, data communication in a monolithically integrated optocoupler is experimentally demonstrated. The novelty of this work is the use of highly sensitive single-photon avalanche diodes (SPADs) for photo-detection to compensate for the low IQE of AMLEDs. We investigated our optocoupler realized in a standard 140 nm CMOS SOI technology, without postprocessing, for various LED designs and points of operation. The power consumption of the AMLEDs is minimized through a novel AMLED design and employment of a low power LED driver circuit. The advantages of AMLEDs over forward biased Si LEDs are also demonstrated. For the best AMLED design, the achievable data rate is few Mbps and the energy consumption a few nJ/bit. The active area of the proposed systems is < 0.01 mm2.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting (IEDM)
Place of Publication	San Francisco, USA
Publisher	IEEE
ISBN (Electronic)	978-1-7281-1987-8
ISBN (Print)	978-1-7281-1988-5
DOIs	https://doi.org/10.1109/IEDM.2018.8614523
Publication status	Published - 2 Dec 2018
Event	64th IEEE International Electron Devices Meeting, IEDM 2018 - Hilton San Francisco Union Square, San Francisco, United States Duration: 1 Dec 2018 → 5 Dec 2018 Conference number: 64 https://ieee-iedm.org/2018/

Conference

Conference	64th IEEE International Electron Devices Meeting, IEDM 2018
Abbreviated title	IEDM
Country/Territory	United States
City	San Francisco
Period	1/12/18 → 5/12/18
Internet address	https://ieee-iedm.org/2018/

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10.1109/IEDM.2018.8614523

Optocoupling_in_CMOS_ V. Agarwal IEDM SF Dec 2018Accepted author version, 2.14 MB

14 Citations
1 PhD Thesis - Research UT, graduation UT

Optocoupling in CMOS
Agarwal, V., 16 Jan 2019, Enschede: University of Twente. 122 p.
Research output: Thesis › PhD Thesis - Research UT, graduation UT

Open Access
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784 Downloads (Pure)

Cite this

@inproceedings{a8096bdadd2e4a39957ca77d1c19f675,

title = "Optocoupling in CMOS",

abstract = "Abstract— For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal quantum efficiency (IQE) and high power consumption. For the first time, in this work, data communication in a monolithically integrated optocoupler is experimentally demonstrated. The novelty of this work is the use of highly sensitive single-photon avalanche diodes (SPADs) for photo-detection to compensate for the low IQE of AMLEDs. We investigated our optocoupler realized in a standard 140 nm CMOS SOI technology, without postprocessing, for various LED designs and points of operation. The power consumption of the AMLEDs is minimized through a novel AMLED design and employment of a low power LED driver circuit. The advantages of AMLEDs over forward biased Si LEDs are also demonstrated. For the best AMLED design, the achievable data rate is few Mbps and the energy consumption a few nJ/bit. The active area of the proposed systems is < 0.01 mm2. ",

author = "V. Agarwal and S. Dutta and A.J. Annema and R.J.E. Hueting and J. Schmitz and M.-J. Lee and E. Charbon and B. Nauta",

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doi = "10.1109/IEDM.2018.8614523",

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publisher = "IEEE",

address = "United States",

note = "64th IEEE International Electron Devices Meeting, IEDM 2018, IEDM ; Conference date: 01-12-2018 Through 05-12-2018",

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}

TY - GEN

T1 - Optocoupling in CMOS

AU - Agarwal, V.

AU - Dutta, S.

AU - Annema, A.J.

AU - Hueting, R.J.E.

AU - Schmitz, J.

AU - Lee, M.-J.

AU - Charbon, E.

AU - Nauta, B.

N1 - Conference code: 64

PY - 2018/12/2

Y1 - 2018/12/2

N2 - Abstract— For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal quantum efficiency (IQE) and high power consumption. For the first time, in this work, data communication in a monolithically integrated optocoupler is experimentally demonstrated. The novelty of this work is the use of highly sensitive single-photon avalanche diodes (SPADs) for photo-detection to compensate for the low IQE of AMLEDs. We investigated our optocoupler realized in a standard 140 nm CMOS SOI technology, without postprocessing, for various LED designs and points of operation. The power consumption of the AMLEDs is minimized through a novel AMLED design and employment of a low power LED driver circuit. The advantages of AMLEDs over forward biased Si LEDs are also demonstrated. For the best AMLED design, the achievable data rate is few Mbps and the energy consumption a few nJ/bit. The active area of the proposed systems is < 0.01 mm2.

AB - Abstract— For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal quantum efficiency (IQE) and high power consumption. For the first time, in this work, data communication in a monolithically integrated optocoupler is experimentally demonstrated. The novelty of this work is the use of highly sensitive single-photon avalanche diodes (SPADs) for photo-detection to compensate for the low IQE of AMLEDs. We investigated our optocoupler realized in a standard 140 nm CMOS SOI technology, without postprocessing, for various LED designs and points of operation. The power consumption of the AMLEDs is minimized through a novel AMLED design and employment of a low power LED driver circuit. The advantages of AMLEDs over forward biased Si LEDs are also demonstrated. For the best AMLED design, the achievable data rate is few Mbps and the energy consumption a few nJ/bit. The active area of the proposed systems is < 0.01 mm2.

U2 - 10.1109/IEDM.2018.8614523

DO - 10.1109/IEDM.2018.8614523

M3 - Conference contribution

SN - 978-1-7281-1988-5

BT - 2018 IEEE International Electron Devices Meeting (IEDM)

PB - IEEE

CY - San Francisco, USA

T2 - 64th IEEE International Electron Devices Meeting, IEDM 2018

Y2 - 1 December 2018 through 5 December 2018

ER -

Optocoupling in CMOS

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Optocoupling in CMOS

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