Optocoupling in CMOS

V. Agarwal, S. Dutta, A.J. Annema, R.J.E. Hueting, J. Schmitz, M.-J. Lee, E. Charbon, B. Nauta

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
23 Downloads (Pure)

Abstract

Abstract— For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal quantum efficiency (IQE) and high power consumption. For the first time, in this work, data communication in a monolithically integrated optocoupler is experimentally demonstrated. The novelty of this work is the use of highly sensitive single-photon avalanche diodes (SPADs) for photo-detection to compensate for the low IQE of AMLEDs. We investigated our optocoupler realized in a standard 140 nm CMOS SOI technology, without postprocessing, for various LED designs and points of operation. The power consumption of the AMLEDs is minimized through a novel AMLED design and employment of a low power LED driver circuit. The advantages of AMLEDs over forward biased Si LEDs are also demonstrated. For the best AMLED design, the achievable data rate is few Mbps and the energy consumption a few nJ/bit. The active area of the proposed systems is < 0.01 mm2.
Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting (IEDM)
Place of PublicationSan Francisco, USA
PublisherIEEE
ISBN (Electronic)978-1-7281-1987-8
ISBN (Print)978-1-7281-1988-5
DOIs
Publication statusPublished - 2 Dec 2018
Event2018 IEEE International Electron Devices Meeting, IEDM 2018 - Hilton San Francisco Union Square, San Francisco, United States
Duration: 1 Dec 20185 Dec 2018
Conference number: 64
https://ieee-iedm.org/

Conference

Conference2018 IEEE International Electron Devices Meeting, IEDM 2018
Abbreviated titleIEDM
CountryUnited States
CitySan Francisco
Period1/12/185/12/18
Internet address

Fingerprint

CMOS
light emitting diodes
avalanches
quantum efficiency
communication
avalanche diodes
SOI (semiconductors)
energy consumption
silicon
isolation
chips
photons

Cite this

Agarwal, V., Dutta, S., Annema, A. J., Hueting, R. J. E., Schmitz, J., Lee, M-J., ... Nauta, B. (2018). Optocoupling in CMOS. In 2018 IEEE International Electron Devices Meeting (IEDM) San Francisco, USA: IEEE. https://doi.org/10.1109/IEDM.2018.8614523
Agarwal, V. ; Dutta, S. ; Annema, A.J. ; Hueting, R.J.E. ; Schmitz, J. ; Lee, M.-J. ; Charbon, E. ; Nauta, B. / Optocoupling in CMOS. 2018 IEEE International Electron Devices Meeting (IEDM). San Francisco, USA : IEEE, 2018.
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Agarwal, V, Dutta, S, Annema, AJ, Hueting, RJE, Schmitz, J, Lee, M-J, Charbon, E & Nauta, B 2018, Optocoupling in CMOS. in 2018 IEEE International Electron Devices Meeting (IEDM). IEEE, San Francisco, USA, 2018 IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 1/12/18. https://doi.org/10.1109/IEDM.2018.8614523

Optocoupling in CMOS. / Agarwal, V.; Dutta, S.; Annema, A.J.; Hueting, R.J.E.; Schmitz, J.; Lee, M.-J.; Charbon, E.; Nauta, B.

2018 IEEE International Electron Devices Meeting (IEDM). San Francisco, USA : IEEE, 2018.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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N2 - Abstract— For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal quantum efficiency (IQE) and high power consumption. For the first time, in this work, data communication in a monolithically integrated optocoupler is experimentally demonstrated. The novelty of this work is the use of highly sensitive single-photon avalanche diodes (SPADs) for photo-detection to compensate for the low IQE of AMLEDs. We investigated our optocoupler realized in a standard 140 nm CMOS SOI technology, without postprocessing, for various LED designs and points of operation. The power consumption of the AMLEDs is minimized through a novel AMLED design and employment of a low power LED driver circuit. The advantages of AMLEDs over forward biased Si LEDs are also demonstrated. For the best AMLED design, the achievable data rate is few Mbps and the energy consumption a few nJ/bit. The active area of the proposed systems is < 0.01 mm2.

AB - Abstract— For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal quantum efficiency (IQE) and high power consumption. For the first time, in this work, data communication in a monolithically integrated optocoupler is experimentally demonstrated. The novelty of this work is the use of highly sensitive single-photon avalanche diodes (SPADs) for photo-detection to compensate for the low IQE of AMLEDs. We investigated our optocoupler realized in a standard 140 nm CMOS SOI technology, without postprocessing, for various LED designs and points of operation. The power consumption of the AMLEDs is minimized through a novel AMLED design and employment of a low power LED driver circuit. The advantages of AMLEDs over forward biased Si LEDs are also demonstrated. For the best AMLED design, the achievable data rate is few Mbps and the energy consumption a few nJ/bit. The active area of the proposed systems is < 0.01 mm2.

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Agarwal V, Dutta S, Annema AJ, Hueting RJE, Schmitz J, Lee M-J et al. Optocoupling in CMOS. In 2018 IEEE International Electron Devices Meeting (IEDM). San Francisco, USA: IEEE. 2018 https://doi.org/10.1109/IEDM.2018.8614523