Optocoupling in CMOS

V. Agarwal, S. Dutta, A.J. Annema, R.J.E. Hueting, J. Schmitz, M.-J. Lee, E. Charbon, B. Nauta

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    4 Citations (Scopus)
    74 Downloads (Pure)

    Abstract

    Abstract— For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal quantum efficiency (IQE) and high power consumption. For the first time, in this work, data communication in a monolithically integrated optocoupler is experimentally demonstrated. The novelty of this work is the use of highly sensitive single-photon avalanche diodes (SPADs) for photo-detection to compensate for the low IQE of AMLEDs. We investigated our optocoupler realized in a standard 140 nm CMOS SOI technology, without postprocessing, for various LED designs and points of operation. The power consumption of the AMLEDs is minimized through a novel AMLED design and employment of a low power LED driver circuit. The advantages of AMLEDs over forward biased Si LEDs are also demonstrated. For the best AMLED design, the achievable data rate is few Mbps and the energy consumption a few nJ/bit. The active area of the proposed systems is < 0.01 mm2.
    Original languageEnglish
    Title of host publication2018 IEEE International Electron Devices Meeting (IEDM)
    Place of PublicationSan Francisco, USA
    PublisherIEEE
    ISBN (Electronic)978-1-7281-1987-8
    ISBN (Print)978-1-7281-1988-5
    DOIs
    Publication statusPublished - 2 Dec 2018
    Event64th IEEE International Electron Devices Meeting, IEDM 2018 - Hilton San Francisco Union Square, San Francisco, United States
    Duration: 1 Dec 20185 Dec 2018
    Conference number: 64
    https://ieee-iedm.org/2018/

    Conference

    Conference64th IEEE International Electron Devices Meeting, IEDM 2018
    Abbreviated titleIEDM
    CountryUnited States
    CitySan Francisco
    Period1/12/185/12/18
    Internet address

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  • Cite this

    Agarwal, V., Dutta, S., Annema, A. J., Hueting, R. J. E., Schmitz, J., Lee, M-J., ... Nauta, B. (2018). Optocoupling in CMOS. In 2018 IEEE International Electron Devices Meeting (IEDM) San Francisco, USA: IEEE. https://doi.org/10.1109/IEDM.2018.8614523