Order-disorder phase transition of the Ge(001) surface

H.J.W. Zandvliet; W.J. Caspers; A. van Silfhout

doi:10.1016/0038-1098(91)90703-X

Order-disorder phase transition of the Ge(001) surface

H.J.W. Zandvliet, W.J. Caspers, A. van Silfhout

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Abstract

The order-disorder phase transition of the Ge(001) surface can be described by taking into account only electrostatic interactions between the asymmetric dimers. The transition fits approximately the two-dimensional Ising universality class and accordingly the critical exponent of the order parameter, β, has a value near 1/8 and is observable from an analysis of diffraction intensities. The charge transfer between the up and down atom of the asymmetric dimer consistent with the observed phase transition temperature is about 0.08e.

Original language	English
Pages (from-to)	455-458
Number of pages	4
Journal	Solid state communications
Volume	78
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(91)90703-X
Publication status	Published - 1991

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@article{7b1ce06f4a74480eb6000163d7378542,

title = "Order-disorder phase transition of the Ge(001) surface",

abstract = "The order-disorder phase transition of the Ge(001) surface can be described by taking into account only electrostatic interactions between the asymmetric dimers. The transition fits approximately the two-dimensional Ising universality class and accordingly the critical exponent of the order parameter, β, has a value near 1/8 and is observable from an analysis of diffraction intensities. The charge transfer between the up and down atom of the asymmetric dimer consistent with the observed phase transition temperature is about 0.08e.",

author = "H.J.W. Zandvliet and W.J. Caspers and {van Silfhout}, A.",

year = "1991",

doi = "10.1016/0038-1098(91)90703-X",

language = "English",

volume = "78",

pages = "455--458",

journal = "Solid state communications",

issn = "0038-1098",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Order-disorder phase transition of the Ge(001) surface

AU - Zandvliet, H.J.W.

AU - Caspers, W.J.

AU - van Silfhout, A.

PY - 1991

Y1 - 1991

N2 - The order-disorder phase transition of the Ge(001) surface can be described by taking into account only electrostatic interactions between the asymmetric dimers. The transition fits approximately the two-dimensional Ising universality class and accordingly the critical exponent of the order parameter, β, has a value near 1/8 and is observable from an analysis of diffraction intensities. The charge transfer between the up and down atom of the asymmetric dimer consistent with the observed phase transition temperature is about 0.08e.

AB - The order-disorder phase transition of the Ge(001) surface can be described by taking into account only electrostatic interactions between the asymmetric dimers. The transition fits approximately the two-dimensional Ising universality class and accordingly the critical exponent of the order parameter, β, has a value near 1/8 and is observable from an analysis of diffraction intensities. The charge transfer between the up and down atom of the asymmetric dimer consistent with the observed phase transition temperature is about 0.08e.

U2 - 10.1016/0038-1098(91)90703-X

DO - 10.1016/0038-1098(91)90703-X

M3 - Article

VL - 78

SP - 455

EP - 458

JO - Solid state communications

JF - Solid state communications

SN - 0038-1098

IS - 5

ER -