Ordering of vacancies on Si(001)

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Abstract

Missing dimer vacancies are always present on the clean Si(001) surface. The vacancy density can be increased by ion bombardment (Xe+, Ar+), etching (O2, Br2, I2, etc.) or Ni contamination. The equilibrium shape at low vacancy concentrations (<0.2¿0.3 monolayers) of these vacancy islands is elongated in a direction perpendicular to the dimer rows of the upper terrace, whereas for higher vacancy concentrations the equilibrium shape is rotated by 90°. The absence of dimerisation within the narrow vacancy islands at low vacancy concentration alone is not sufficient to explain this shape transformation, therefore it is suggested that the specific rebonding of these structures also plays a role. A more detailed analysis of the annealing behaviour, width, spacing between and depth of the elongated low-vacancy concentration vacancy islands reveals that the Ni-induced vacancy islands differ significantly from the etching-induced vacancy islands.
Original languageUndefined
Pages (from-to)1-6
Number of pages7
JournalSurface science
Volume1997
Issue number377
DOIs
Publication statusPublished - 1997

Keywords

  • METIS-128649
  • IR-23850

Cite this

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title = "Ordering of vacancies on Si(001)",
abstract = "Missing dimer vacancies are always present on the clean Si(001) surface. The vacancy density can be increased by ion bombardment (Xe+, Ar+), etching (O2, Br2, I2, etc.) or Ni contamination. The equilibrium shape at low vacancy concentrations (<0.2¿0.3 monolayers) of these vacancy islands is elongated in a direction perpendicular to the dimer rows of the upper terrace, whereas for higher vacancy concentrations the equilibrium shape is rotated by 90°. The absence of dimerisation within the narrow vacancy islands at low vacancy concentration alone is not sufficient to explain this shape transformation, therefore it is suggested that the specific rebonding of these structures also plays a role. A more detailed analysis of the annealing behaviour, width, spacing between and depth of the elongated low-vacancy concentration vacancy islands reveals that the Ni-induced vacancy islands differ significantly from the etching-induced vacancy islands.",
keywords = "METIS-128649, IR-23850",
author = "Zandvliet, {Henricus J.W.}",
year = "1997",
doi = "10.1016/S0039-6028(96)01316-7",
language = "Undefined",
volume = "1997",
pages = "1--6",
journal = "Surface science",
issn = "0039-6028",
publisher = "Elsevier",
number = "377",

}

Ordering of vacancies on Si(001). / Zandvliet, Henricus J.W.

In: Surface science, Vol. 1997, No. 377, 1997, p. 1-6.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Ordering of vacancies on Si(001)

AU - Zandvliet, Henricus J.W.

PY - 1997

Y1 - 1997

N2 - Missing dimer vacancies are always present on the clean Si(001) surface. The vacancy density can be increased by ion bombardment (Xe+, Ar+), etching (O2, Br2, I2, etc.) or Ni contamination. The equilibrium shape at low vacancy concentrations (<0.2¿0.3 monolayers) of these vacancy islands is elongated in a direction perpendicular to the dimer rows of the upper terrace, whereas for higher vacancy concentrations the equilibrium shape is rotated by 90°. The absence of dimerisation within the narrow vacancy islands at low vacancy concentration alone is not sufficient to explain this shape transformation, therefore it is suggested that the specific rebonding of these structures also plays a role. A more detailed analysis of the annealing behaviour, width, spacing between and depth of the elongated low-vacancy concentration vacancy islands reveals that the Ni-induced vacancy islands differ significantly from the etching-induced vacancy islands.

AB - Missing dimer vacancies are always present on the clean Si(001) surface. The vacancy density can be increased by ion bombardment (Xe+, Ar+), etching (O2, Br2, I2, etc.) or Ni contamination. The equilibrium shape at low vacancy concentrations (<0.2¿0.3 monolayers) of these vacancy islands is elongated in a direction perpendicular to the dimer rows of the upper terrace, whereas for higher vacancy concentrations the equilibrium shape is rotated by 90°. The absence of dimerisation within the narrow vacancy islands at low vacancy concentration alone is not sufficient to explain this shape transformation, therefore it is suggested that the specific rebonding of these structures also plays a role. A more detailed analysis of the annealing behaviour, width, spacing between and depth of the elongated low-vacancy concentration vacancy islands reveals that the Ni-induced vacancy islands differ significantly from the etching-induced vacancy islands.

KW - METIS-128649

KW - IR-23850

U2 - 10.1016/S0039-6028(96)01316-7

DO - 10.1016/S0039-6028(96)01316-7

M3 - Article

VL - 1997

SP - 1

EP - 6

JO - Surface science

JF - Surface science

SN - 0039-6028

IS - 377

ER -