Organic layers on silicon result in a unique hybrid fet

E.J. Faber, M. Albers, L.C.P.M. de Smet, W. Olthuis*, H. Zuilhof, E.J.R. Sudhölter, P. Bergveld, A. van den Berg

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials. Keywords: organic monolayer, FET, conducting polymer
    Original languageEnglish
    Title of host publicationEurosensors XXII
    Subtitle of host publicationBook of abstracts, Dresden, 7-10 September 2008
    Place of PublicationDresden
    PublisherVerein Deutscher Ingenieure e.V. (VDI)
    Pages848-851
    Number of pages4
    ISBN (Print)978-3-00-025217-4
    Publication statusPublished - 7 Sep 2008
    Event22nd International Conference on Solid-State Sensors, Actuators, Microsystems and Nanosystems 2008 - Dresden, Germany
    Duration: 7 Sep 200810 Sep 2008
    Conference number: 22

    Conference

    Conference22nd International Conference on Solid-State Sensors, Actuators, Microsystems and Nanosystems 2008
    Abbreviated titleEurosensors 2008
    CountryGermany
    CityDresden
    Period7/09/0810/09/08

    Keywords

    • Organic monolayers
    • FET
    • Conducting polymers

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