Organic layers on silicon result in a unique hybrid fet

E.J. Faber; M. Albers; L.C.P.M. de Smet; W. Olthuis; H. Zuilhof; E.J.R. Sudhölter; P. Bergveld; A. van den Berg

Organic layers on silicon result in a unique hybrid fet

E.J. Faber, M. Albers, L.C.P.M. de Smet, W. Olthuis^*, H. Zuilhof, E.J.R. Sudhölter, P. Bergveld, A. van den Berg

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials. Keywords: organic monolayer, FET, conducting polymer

Original language	English
Title of host publication	Eurosensors XXII
Subtitle of host publication	Book of abstracts, Dresden, 7-10 September 2008
Place of Publication	Dresden
Publisher	Verein Deutscher Ingenieure e.V. (VDI)
Pages	848-851
Number of pages	4
ISBN (Print)	978-3-00-025217-4
Publication status	Published - 7 Sept 2008
Event	22nd International Conference on Solid-State Sensors, Actuators, Microsystems and Nanosystems 2008 - Dresden, Germany Duration: 7 Sept 2008 → 10 Sept 2008 Conference number: 22

Conference

Conference	22nd International Conference on Solid-State Sensors, Actuators, Microsystems and Nanosystems 2008
Abbreviated title	Eurosensors 2008
Country/Territory	Germany
City	Dresden
Period	7/09/08 → 10/09/08

Keywords

Organic monolayers
FET
Conducting polymers

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title = "Organic layers on silicon result in a unique hybrid fet",

abstract = "A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials. Keywords: organic monolayer, FET, conducting polymer",

keywords = "Organic monolayers, FET, Conducting polymers",

author = "E.J. Faber and M. Albers and {de Smet}, L.C.P.M. and W. Olthuis and H. Zuilhof and E.J.R. Sudh{\"o}lter and P. Bergveld and {van den Berg}, A.",

year = "2008",

month = sep,

day = "7",

language = "English",

isbn = "978-3-00-025217-4",

pages = "848--851",

booktitle = "Eurosensors XXII",

publisher = "Verein Deutscher Ingenieure e.V. (VDI)",

note = "22nd International Conference on Solid-State Sensors, Actuators, Microsystems and Nanosystems 2008, Eurosensors 2008 ; Conference date: 07-09-2008 Through 10-09-2008",

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Faber, EJ, Albers, M, de Smet, LCPM, Olthuis, W, Zuilhof, H, Sudhölter, EJR, Bergveld, P & van den Berg, A 2008, Organic layers on silicon result in a unique hybrid fet. in Eurosensors XXII: Book of abstracts, Dresden, 7-10 September 2008. Verein Deutscher Ingenieure e.V. (VDI), Dresden, pp. 848-851, 22nd International Conference on Solid-State Sensors, Actuators, Microsystems and Nanosystems 2008, Dresden, Germany, 7/09/08.

TY - GEN

T1 - Organic layers on silicon result in a unique hybrid fet

AU - Faber, E.J.

AU - Albers, M.

AU - de Smet, L.C.P.M.

AU - Olthuis, W.

AU - Zuilhof, H.

AU - Sudhölter, E.J.R.

AU - Bergveld, P.

AU - van den Berg, A.

N1 - Conference code: 22

PY - 2008/9/7

Y1 - 2008/9/7

N2 - A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials. Keywords: organic monolayer, FET, conducting polymer

AB - A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials. Keywords: organic monolayer, FET, conducting polymer

KW - Organic monolayers

KW - FET

KW - Conducting polymers

M3 - Conference contribution

SN - 978-3-00-025217-4

SP - 848

EP - 851

BT - Eurosensors XXII

PB - Verein Deutscher Ingenieure e.V. (VDI)

CY - Dresden

T2 - 22nd International Conference on Solid-State Sensors, Actuators, Microsystems and Nanosystems 2008

Y2 - 7 September 2008 through 10 September 2008

ER -

Organic layers on silicon result in a unique hybrid fet

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Keywords

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