Organic layers on silicon result in a unique hybrid fet

Erik Jouwert Faber, M. Albers, L.C.P.M. de Smet, Wouter Olthuis, H. Zuilhof, E.J.R. Sudholter, Piet Bergveld, Albert van den Berg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials. Keywords: organic monolayer, FET, conducting polymer
LanguageUndefined
Title of host publication22nd International Conference Eurosensors
Place of PublicationDresden
PublisherVerein Deutscher Ingenieure e.V. (VDI)
Pages848-851
Number of pages4
ISBN (Print)978-3-00-025217-4
StatePublished - 7 Sep 2008
Event22nd International Conference on Solid-State Sensors, Actuators, Microsystems and Nanosystems 2008 - Dresden, Germany
Duration: 7 Sep 200810 Sep 2008
Conference number: 22

Conference

Conference22nd International Conference on Solid-State Sensors, Actuators, Microsystems and Nanosystems 2008
Abbreviated titleEurosensors 2008
CountryGermany
CityDresden
Period7/09/0810/09/08

Keywords

  • EWI-14754
  • METIS-255434
  • IR-60693

Cite this

Faber, E. J., Albers, M., de Smet, L. C. P. M., Olthuis, W., Zuilhof, H., Sudholter, E. J. R., ... van den Berg, A. (2008). Organic layers on silicon result in a unique hybrid fet. In 22nd International Conference Eurosensors (pp. 848-851). Dresden: Verein Deutscher Ingenieure e.V. (VDI).
Faber, Erik Jouwert ; Albers, M. ; de Smet, L.C.P.M. ; Olthuis, Wouter ; Zuilhof, H. ; Sudholter, E.J.R. ; Bergveld, Piet ; van den Berg, Albert. / Organic layers on silicon result in a unique hybrid fet. 22nd International Conference Eurosensors. Dresden : Verein Deutscher Ingenieure e.V. (VDI), 2008. pp. 848-851
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title = "Organic layers on silicon result in a unique hybrid fet",
abstract = "A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials. Keywords: organic monolayer, FET, conducting polymer",
keywords = "EWI-14754, METIS-255434, IR-60693",
author = "Faber, {Erik Jouwert} and M. Albers and {de Smet}, L.C.P.M. and Wouter Olthuis and H. Zuilhof and E.J.R. Sudholter and Piet Bergveld and {van den Berg}, Albert",
year = "2008",
month = "9",
day = "7",
language = "Undefined",
isbn = "978-3-00-025217-4",
pages = "848--851",
booktitle = "22nd International Conference Eurosensors",
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Faber, EJ, Albers, M, de Smet, LCPM, Olthuis, W, Zuilhof, H, Sudholter, EJR, Bergveld, P & van den Berg, A 2008, Organic layers on silicon result in a unique hybrid fet. in 22nd International Conference Eurosensors. Verein Deutscher Ingenieure e.V. (VDI), Dresden, pp. 848-851, 22nd International Conference on Solid-State Sensors, Actuators, Microsystems and Nanosystems 2008, Dresden, Germany, 7/09/08.

Organic layers on silicon result in a unique hybrid fet. / Faber, Erik Jouwert; Albers, M.; de Smet, L.C.P.M.; Olthuis, Wouter; Zuilhof, H.; Sudholter, E.J.R.; Bergveld, Piet; van den Berg, Albert.

22nd International Conference Eurosensors. Dresden : Verein Deutscher Ingenieure e.V. (VDI), 2008. p. 848-851.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Organic layers on silicon result in a unique hybrid fet

AU - Faber,Erik Jouwert

AU - Albers,M.

AU - de Smet,L.C.P.M.

AU - Olthuis,Wouter

AU - Zuilhof,H.

AU - Sudholter,E.J.R.

AU - Bergveld,Piet

AU - van den Berg,Albert

PY - 2008/9/7

Y1 - 2008/9/7

N2 - A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials. Keywords: organic monolayer, FET, conducting polymer

AB - A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials. Keywords: organic monolayer, FET, conducting polymer

KW - EWI-14754

KW - METIS-255434

KW - IR-60693

M3 - Conference contribution

SN - 978-3-00-025217-4

SP - 848

EP - 851

BT - 22nd International Conference Eurosensors

PB - Verein Deutscher Ingenieure e.V. (VDI)

CY - Dresden

ER -

Faber EJ, Albers M, de Smet LCPM, Olthuis W, Zuilhof H, Sudholter EJR et al. Organic layers on silicon result in a unique hybrid fet. In 22nd International Conference Eurosensors. Dresden: Verein Deutscher Ingenieure e.V. (VDI). 2008. p. 848-851.