Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping

W. Siemons, Gertjan Koster, Hideki Yamamoto, Walter A. Harrison, Gerald Lucovsky, Theodore H. Geballe, David H.A. Blank, Malcolm R. Beasley

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Abstract

As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.
Original languageUndefined
Pages (from-to)196802-
Number of pages4
JournalPhysical review letters
Volume98
Issue number19
DOIs
Publication statusPublished - 2007

Keywords

  • IR-59119
  • METIS-242616

Cite this

Siemons, W., Koster, G., Yamamoto, H., Harrison, W. A., Lucovsky, G., Geballe, T. H., ... Beasley, M. R. (2007). Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping. Physical review letters, 98(19), 196802-. https://doi.org/10.1103/PhysRevLett.98.196802
Siemons, W. ; Koster, Gertjan ; Yamamoto, Hideki ; Harrison, Walter A. ; Lucovsky, Gerald ; Geballe, Theodore H. ; Blank, David H.A. ; Beasley, Malcolm R. / Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping. In: Physical review letters. 2007 ; Vol. 98, No. 19. pp. 196802-.
@article{fe0828a415f8466fa3ad71a6fe199f78,
title = "Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping",
abstract = "As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.",
keywords = "IR-59119, METIS-242616",
author = "W. Siemons and Gertjan Koster and Hideki Yamamoto and Harrison, {Walter A.} and Gerald Lucovsky and Geballe, {Theodore H.} and Blank, {David H.A.} and Beasley, {Malcolm R.}",
year = "2007",
doi = "10.1103/PhysRevLett.98.196802",
language = "Undefined",
volume = "98",
pages = "196802--",
journal = "Physical review letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "19",

}

Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping. / Siemons, W.; Koster, Gertjan; Yamamoto, Hideki; Harrison, Walter A.; Lucovsky, Gerald; Geballe, Theodore H.; Blank, David H.A.; Beasley, Malcolm R.

In: Physical review letters, Vol. 98, No. 19, 2007, p. 196802-.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping

AU - Siemons, W.

AU - Koster, Gertjan

AU - Yamamoto, Hideki

AU - Harrison, Walter A.

AU - Lucovsky, Gerald

AU - Geballe, Theodore H.

AU - Blank, David H.A.

AU - Beasley, Malcolm R.

PY - 2007

Y1 - 2007

N2 - As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

AB - As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

KW - IR-59119

KW - METIS-242616

U2 - 10.1103/PhysRevLett.98.196802

DO - 10.1103/PhysRevLett.98.196802

M3 - Article

VL - 98

SP - 196802-

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

IS - 19

ER -