Origin of roughening in epitaxial growth of Si on Si(001) and Ge(001) surfaces

E. Zoethout, M Esser, Henricus J.W. Zandvliet, Bene Poelsema

Research output: Other contributionOther research output

Original languageUndefined
Place of PublicationVeldhoven
Publication statusPublished - 19 Dec 2000

Keywords

  • METIS-130809

Cite this

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title = "Origin of roughening in epitaxial growth of Si on Si(001) and Ge(001) surfaces",
keywords = "METIS-130809",
author = "E. Zoethout and M Esser and Zandvliet, {Henricus J.W.} and Bene Poelsema",
year = "2000",
month = "12",
day = "19",
language = "Undefined",
type = "Other",

}

Origin of roughening in epitaxial growth of Si on Si(001) and Ge(001) surfaces. / Zoethout, E.; Esser, M; Zandvliet, Henricus J.W.; Poelsema, Bene.

Veldhoven. 2000, .

Research output: Other contributionOther research output

TY - GEN

T1 - Origin of roughening in epitaxial growth of Si on Si(001) and Ge(001) surfaces

AU - Zoethout, E.

AU - Esser, M

AU - Zandvliet, Henricus J.W.

AU - Poelsema, Bene

PY - 2000/12/19

Y1 - 2000/12/19

KW - METIS-130809

M3 - Other contribution

CY - Veldhoven

ER -