Origin of the butterfly magnetoresistance in ZrSiS

J. A. Voerman*, L. Mulder, J. C. De Boer, Y. Huang, L. M. Schoop, Chuan Li, A. Brinkman

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Downloads (Pure)

Abstract

ZrSiS has been identified as a topological material made from nontoxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance, this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crystalline flakes. We identify near-perfect electron-hole compensation, tuned by the Zeeman effect, as the source of the butterfly magnetoresistance. Furthermore, the observed Shubnikov-de Haas oscillations are carefully analyzed using the Lifshitz-Kosevich equation to determine their Berry phase and thus their topological properties. Although the link between the butterfly magnetoresistance and the Berry phase remains uncertain, the topological nature of ZrSiS is confirmed.

Original languageEnglish
Article number084203
JournalPhysical Review Materials
Volume3
Issue number8
DOIs
Publication statusPublished - 23 Aug 2019

Fingerprint

Zeeman effect
flakes
Magnetoresistance
oscillations
Galvanomagnetic effects
Earth (planet)
Crystalline materials
Electrons

Cite this

Voerman, J. A. ; Mulder, L. ; De Boer, J. C. ; Huang, Y. ; Schoop, L. M. ; Li, Chuan ; Brinkman, A. / Origin of the butterfly magnetoresistance in ZrSiS. In: Physical Review Materials . 2019 ; Vol. 3, No. 8.
@article{71c4e004ffe54ac49c498799aa1bf8c6,
title = "Origin of the butterfly magnetoresistance in ZrSiS",
abstract = "ZrSiS has been identified as a topological material made from nontoxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance, this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crystalline flakes. We identify near-perfect electron-hole compensation, tuned by the Zeeman effect, as the source of the butterfly magnetoresistance. Furthermore, the observed Shubnikov-de Haas oscillations are carefully analyzed using the Lifshitz-Kosevich equation to determine their Berry phase and thus their topological properties. Although the link between the butterfly magnetoresistance and the Berry phase remains uncertain, the topological nature of ZrSiS is confirmed.",
author = "Voerman, {J. A.} and L. Mulder and {De Boer}, {J. C.} and Y. Huang and Schoop, {L. M.} and Chuan Li and A. Brinkman",
year = "2019",
month = "8",
day = "23",
doi = "10.1103/PhysRevMaterials.3.084203",
language = "English",
volume = "3",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "8",

}

Origin of the butterfly magnetoresistance in ZrSiS. / Voerman, J. A.; Mulder, L.; De Boer, J. C.; Huang, Y.; Schoop, L. M.; Li, Chuan; Brinkman, A.

In: Physical Review Materials , Vol. 3, No. 8, 084203, 23.08.2019.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Origin of the butterfly magnetoresistance in ZrSiS

AU - Voerman, J. A.

AU - Mulder, L.

AU - De Boer, J. C.

AU - Huang, Y.

AU - Schoop, L. M.

AU - Li, Chuan

AU - Brinkman, A.

PY - 2019/8/23

Y1 - 2019/8/23

N2 - ZrSiS has been identified as a topological material made from nontoxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance, this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crystalline flakes. We identify near-perfect electron-hole compensation, tuned by the Zeeman effect, as the source of the butterfly magnetoresistance. Furthermore, the observed Shubnikov-de Haas oscillations are carefully analyzed using the Lifshitz-Kosevich equation to determine their Berry phase and thus their topological properties. Although the link between the butterfly magnetoresistance and the Berry phase remains uncertain, the topological nature of ZrSiS is confirmed.

AB - ZrSiS has been identified as a topological material made from nontoxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance, this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crystalline flakes. We identify near-perfect electron-hole compensation, tuned by the Zeeman effect, as the source of the butterfly magnetoresistance. Furthermore, the observed Shubnikov-de Haas oscillations are carefully analyzed using the Lifshitz-Kosevich equation to determine their Berry phase and thus their topological properties. Although the link between the butterfly magnetoresistance and the Berry phase remains uncertain, the topological nature of ZrSiS is confirmed.

UR - http://www.scopus.com/inward/record.url?scp=85072265047&partnerID=8YFLogxK

U2 - 10.1103/PhysRevMaterials.3.084203

DO - 10.1103/PhysRevMaterials.3.084203

M3 - Article

AN - SCOPUS:85072265047

VL - 3

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 8

M1 - 084203

ER -

Voerman JA, Mulder L, De Boer JC, Huang Y, Schoop LM, Li C et al. Origin of the butterfly magnetoresistance in ZrSiS. Physical Review Materials . 2019 Aug 23;3(8). 084203. https://doi.org/10.1103/PhysRevMaterials.3.084203