Origin of the increased resistivity in epitaxial Fe3O4 films

W. Eerenstein*, T. T M Palstra, T. Hibma, S. Celotto

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

164 Citations (Scopus)

Abstract

We report resistivity measurements on epitaxial Fe3O4 films between 3 and 100 nm thickness grown on polished MgO substrates. The resistivity of the films is larger than the bulk resistivity, and is increasing with decreasing film thickness, This can be explained by the significant decrease of antiphase domain size with decreasing film thickness, as observed by transmission electron microscopy. The domain size decreases from 40 nm for 100-nm-thick films, to 5 nm for 3-nm-thick films. The effective conductivity has been modeled as a function of the bulk and boundary conductivities using the effective medium approximation. It is suggested that the absence of the Verwey transition in the thinnest films is also related to the very small domain size, which inhibits long-range order.

Original languageEnglish
Article number201101
Pages (from-to)2011011-2011014
Number of pages4
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume66
Issue number20
DOIs
Publication statusPublished - 15 Nov 2002
Externally publishedYes

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