Outphasing Class-E Power Amplifiers: From Theory to Back-Off Efficiency Improvement

Ali  Ghahremani; Anne J. Annema; Bram  Nauta

doi:10.1109/JSSC.2017.2787759

Outphasing Class-E Power Amplifiers: From Theory to Back-Off Efficiency Improvement

Ali Ghahremani, Anne J. Annema, Bram Nauta

Research output: Contribution to journal › Article › Academic › peer-review

13 Citations (Scopus)

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Abstract

This paper presents an analysis of outphasing class-E Power Amplifiers (OEPAs), using load-pull analyses of single class-E PAs. This analysis is subsequently used to rotate and shift power contours and rotate the efficiency contours to improve the efficiency of OEPAs at deep power back-off, to improve the Output Power Dynamic Range (OPDR) and to reduce switch voltage stress. To validate the theory a 65nm CMOS prototype, using a pcb transmission-line based power combiner was implemented. The OEPA provides +20.1dBm output power from VDD=1.25V at 1.8GHz with more than 65% Drain Efficiency (DE) and 60% Power Added Efficiency (PAE). The presented technique enables more than 49dB OPDR and 37% DE and 22%PAE at 12dB back-off with reduced switch voltage stress.

Original language	English
Pages (from-to)	1374-1386
Number of pages	13
Journal	IEEE journal of solid-state circuits
Volume	53
Issue number	5
Early online date	23 Jan 0002
DOIs	https://doi.org/10.1109/JSSC.2017.2787759
Publication status	Published - 1 May 2018

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title = "Outphasing Class-E Power Amplifiers: From Theory to Back-Off Efficiency Improvement",

abstract = "This paper presents an analysis of outphasing class-E Power Amplifiers (OEPAs), using load-pull analyses of single class-E PAs. This analysis is subsequently used to rotate and shift power contours and rotate the efficiency contours to improve the efficiency of OEPAs at deep power back-off, to improve the Output Power Dynamic Range (OPDR) and to reduce switch voltage stress. To validate the theory a 65nm CMOS prototype, using a pcb transmission-line based power combiner was implemented. The OEPA provides +20.1dBm output power from VDD=1.25V at 1.8GHz with more than 65% Drain Efficiency (DE) and 60% Power Added Efficiency (PAE). The presented technique enables more than 49dB OPDR and 37% DE and 22%PAE at 12dB back-off with reduced switch voltage stress. ",

author = "Ali Ghahremani and Annema, {Anne J.} and Bram Nauta",

year = "2018",

month = may,

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doi = "10.1109/JSSC.2017.2787759",

language = "English",

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journal = "IEEE journal of solid-state circuits",

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publisher = "IEEE",

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TY - JOUR

T1 - Outphasing Class-E Power Amplifiers

T2 - From Theory to Back-Off Efficiency Improvement

AU - Ghahremani, Ali

AU - Annema, Anne J.

AU - Nauta, Bram

PY - 2018/5/1

Y1 - 2018/5/1

N2 - This paper presents an analysis of outphasing class-E Power Amplifiers (OEPAs), using load-pull analyses of single class-E PAs. This analysis is subsequently used to rotate and shift power contours and rotate the efficiency contours to improve the efficiency of OEPAs at deep power back-off, to improve the Output Power Dynamic Range (OPDR) and to reduce switch voltage stress. To validate the theory a 65nm CMOS prototype, using a pcb transmission-line based power combiner was implemented. The OEPA provides +20.1dBm output power from VDD=1.25V at 1.8GHz with more than 65% Drain Efficiency (DE) and 60% Power Added Efficiency (PAE). The presented technique enables more than 49dB OPDR and 37% DE and 22%PAE at 12dB back-off with reduced switch voltage stress.

AB - This paper presents an analysis of outphasing class-E Power Amplifiers (OEPAs), using load-pull analyses of single class-E PAs. This analysis is subsequently used to rotate and shift power contours and rotate the efficiency contours to improve the efficiency of OEPAs at deep power back-off, to improve the Output Power Dynamic Range (OPDR) and to reduce switch voltage stress. To validate the theory a 65nm CMOS prototype, using a pcb transmission-line based power combiner was implemented. The OEPA provides +20.1dBm output power from VDD=1.25V at 1.8GHz with more than 65% Drain Efficiency (DE) and 60% Power Added Efficiency (PAE). The presented technique enables more than 49dB OPDR and 37% DE and 22%PAE at 12dB back-off with reduced switch voltage stress.

U2 - 10.1109/JSSC.2017.2787759

DO - 10.1109/JSSC.2017.2787759

M3 - Article

VL - 53

SP - 1374

EP - 1386

JO - IEEE journal of solid-state circuits

JF - IEEE journal of solid-state circuits

SN - 0018-9200

IS - 5

ER -

Outphasing Class-E Power Amplifiers: From Theory to Back-Off Efficiency Improvement

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