Oxidation and metal contamination of EUV optics

Research output: Contribution to conferencePoster

Abstract

The next generation photolithography will use 13.5 nm Extreme Ultraviolet (EUV) for printing smaller features on chips. One of the hallenges is to optimally control the contamination of the multilayer mirrors used in the imaging system. The aim of this project is generating fundamental understanding of contamination and cleaning reactions.
Original languageUndefined
Pages-
Publication statusPublished - 9 Dec 2013
EventM2I Conference 2013: Tertiary Oxidation and metal contamination of EUV optics - Noordwijkerhout, The Netherlands
Duration: 9 Dec 201310 Dec 2013

Conference

ConferenceM2I Conference 2013
CityNoordwijkerhout, The Netherlands
Period9/12/1310/12/13

Keywords

  • METIS-299694

Cite this