Abstract
The oxidation kinetics of chromium at 900°C are independent of the oxygen partial pressure. Although this observation gives evidence for a defect mechanism where chromium interstitials account for the chromium transport in the oxide scale, the experimental phenomena do not support one single model. The occurrence of oxide whiskers and oxide ridges are explained by the energy of activation for the breakup of the oxidant molecule. Large oxide pegs are formed at metal multiple-grain junctions after scale breakdown.
Original language | English |
---|---|
Pages (from-to) | 433–447 |
Journal | Oxidation of metals |
Volume | 32 |
Issue number | 5-6 |
DOIs | |
Publication status | Published - 1989 |
Keywords
- Ion implantation
- Oxidation
- sulphidation
- IR-85591
- CER
- Incoloy 800H