Oxide Electrodes for Pb(Zr0.52Ti0.48)O3 Capacitors

Research output: ThesisPhD Thesis - Research UT, graduation UTAcademic

22 Downloads (Pure)

Abstract

Ferroelectric thin films have been widely studied to understand the fundamental physics and for applications because of their ferroelectric non-volatile memory and fast switching characteristics. Typically, a layer of ferroelectric material is sandwiched between a pair of electrodes to realize the functionalities in capacitors. Conductive oxide materials with the perovskite structure are a suitable template to epitaxially grow the subsequent ferroelectric PZT layer for high-performance devices. Currently, SrRuO3 (SRO) and LaNiO3 (LNO) are widely
used as electrodes in PZT capacitors in the laboratory. However, attention needs to be given to the resistivity of these oxide electrodes, and the lattice mismatch between the electrode layers and PZT. Growth mechanisms of La0.07Ba0.93SnO3 (LBSO) and SrVO3 (SVO) are reported. Because lattice constant of LBSO is perfectly matched with PZT and SVO has high conductivity. The conclusion of the growth study is that kinetic effects and oxidation species both make a contribution to determine the growth mode in PLD. The performance of PZT capacitors with an electrode of LBSO or SRO was studied. This work clearly shows the work function and the carrier density of oxide electrodes in ferroelectric devices play an important role in the polarization switching and fatigue properties. A conductive oxide material with a high work function and high carrier density is required for PZT ferroelectric devices. The properties of SVO in a heterostructure was studied in the last chapter. The metal-insulator transition (MIT) of SrTiO3 (STO) capped SVO ultrathin films and SVO/STO superlattices were observed. The conductivity enhancement in SVO/STO superlattices compared to the single SVO/STO bilayer is explained by interlayers coupling effects.
Original languageEnglish
QualificationDoctor of Philosophy
Awarding Institution
  • University of Twente
Supervisors/Advisors
  • Rijnders, Guus, Supervisor
  • Koster, Gertjan, Supervisor
Award date5 Jul 2019
Place of PublicationEnschede
Publisher
Print ISBNs978-90-365-4809-0
Electronic ISBNs978-90-365-4809-0
DOIs
Publication statusPublished - 5 Jul 2019

Fingerprint

capacitors
electrodes
oxides
superlattices
conductivity
ferroelectric materials
interlayers
templates
insulators
oxidation
electrical resistivity
physics
augmentation
kinetics
polarization
thin films
metals

Keywords

  • PLD
  • Ferroelectric
  • Oxide electrode

Cite this

Wang, Jun. / Oxide Electrodes for Pb(Zr0.52Ti0.48)O3 Capacitors. Enschede : University of Twente, 2019. 108 p.
@phdthesis{d68103c61ed34cc4a4abd84290e2e7d4,
title = "Oxide Electrodes for Pb(Zr0.52Ti0.48)O3 Capacitors",
abstract = "Ferroelectric thin films have been widely studied to understand the fundamental physics and for applications because of their ferroelectric non-volatile memory and fast switching characteristics. Typically, a layer of ferroelectric material is sandwiched between a pair of electrodes to realize the functionalities in capacitors. Conductive oxide materials with the perovskite structure are a suitable template to epitaxially grow the subsequent ferroelectric PZT layer for high-performance devices. Currently, SrRuO3 (SRO) and LaNiO3 (LNO) are widelyused as electrodes in PZT capacitors in the laboratory. However, attention needs to be given to the resistivity of these oxide electrodes, and the lattice mismatch between the electrode layers and PZT. Growth mechanisms of La0.07Ba0.93SnO3 (LBSO) and SrVO3 (SVO) are reported. Because lattice constant of LBSO is perfectly matched with PZT and SVO has high conductivity. The conclusion of the growth study is that kinetic effects and oxidation species both make a contribution to determine the growth mode in PLD. The performance of PZT capacitors with an electrode of LBSO or SRO was studied. This work clearly shows the work function and the carrier density of oxide electrodes in ferroelectric devices play an important role in the polarization switching and fatigue properties. A conductive oxide material with a high work function and high carrier density is required for PZT ferroelectric devices. The properties of SVO in a heterostructure was studied in the last chapter. The metal-insulator transition (MIT) of SrTiO3 (STO) capped SVO ultrathin films and SVO/STO superlattices were observed. The conductivity enhancement in SVO/STO superlattices compared to the single SVO/STO bilayer is explained by interlayers coupling effects.",
keywords = "PLD, Ferroelectric, Oxide electrode",
author = "Jun Wang",
year = "2019",
month = "7",
day = "5",
doi = "10.3990/1.9789036548090",
language = "English",
isbn = "978-90-365-4809-0",
publisher = "University of Twente",
address = "Netherlands",
school = "University of Twente",

}

Wang, J 2019, 'Oxide Electrodes for Pb(Zr0.52Ti0.48)O3 Capacitors', Doctor of Philosophy, University of Twente, Enschede. https://doi.org/10.3990/1.9789036548090

Oxide Electrodes for Pb(Zr0.52Ti0.48)O3 Capacitors. / Wang, Jun.

Enschede : University of Twente, 2019. 108 p.

Research output: ThesisPhD Thesis - Research UT, graduation UTAcademic

TY - THES

T1 - Oxide Electrodes for Pb(Zr0.52Ti0.48)O3 Capacitors

AU - Wang, Jun

PY - 2019/7/5

Y1 - 2019/7/5

N2 - Ferroelectric thin films have been widely studied to understand the fundamental physics and for applications because of their ferroelectric non-volatile memory and fast switching characteristics. Typically, a layer of ferroelectric material is sandwiched between a pair of electrodes to realize the functionalities in capacitors. Conductive oxide materials with the perovskite structure are a suitable template to epitaxially grow the subsequent ferroelectric PZT layer for high-performance devices. Currently, SrRuO3 (SRO) and LaNiO3 (LNO) are widelyused as electrodes in PZT capacitors in the laboratory. However, attention needs to be given to the resistivity of these oxide electrodes, and the lattice mismatch between the electrode layers and PZT. Growth mechanisms of La0.07Ba0.93SnO3 (LBSO) and SrVO3 (SVO) are reported. Because lattice constant of LBSO is perfectly matched with PZT and SVO has high conductivity. The conclusion of the growth study is that kinetic effects and oxidation species both make a contribution to determine the growth mode in PLD. The performance of PZT capacitors with an electrode of LBSO or SRO was studied. This work clearly shows the work function and the carrier density of oxide electrodes in ferroelectric devices play an important role in the polarization switching and fatigue properties. A conductive oxide material with a high work function and high carrier density is required for PZT ferroelectric devices. The properties of SVO in a heterostructure was studied in the last chapter. The metal-insulator transition (MIT) of SrTiO3 (STO) capped SVO ultrathin films and SVO/STO superlattices were observed. The conductivity enhancement in SVO/STO superlattices compared to the single SVO/STO bilayer is explained by interlayers coupling effects.

AB - Ferroelectric thin films have been widely studied to understand the fundamental physics and for applications because of their ferroelectric non-volatile memory and fast switching characteristics. Typically, a layer of ferroelectric material is sandwiched between a pair of electrodes to realize the functionalities in capacitors. Conductive oxide materials with the perovskite structure are a suitable template to epitaxially grow the subsequent ferroelectric PZT layer for high-performance devices. Currently, SrRuO3 (SRO) and LaNiO3 (LNO) are widelyused as electrodes in PZT capacitors in the laboratory. However, attention needs to be given to the resistivity of these oxide electrodes, and the lattice mismatch between the electrode layers and PZT. Growth mechanisms of La0.07Ba0.93SnO3 (LBSO) and SrVO3 (SVO) are reported. Because lattice constant of LBSO is perfectly matched with PZT and SVO has high conductivity. The conclusion of the growth study is that kinetic effects and oxidation species both make a contribution to determine the growth mode in PLD. The performance of PZT capacitors with an electrode of LBSO or SRO was studied. This work clearly shows the work function and the carrier density of oxide electrodes in ferroelectric devices play an important role in the polarization switching and fatigue properties. A conductive oxide material with a high work function and high carrier density is required for PZT ferroelectric devices. The properties of SVO in a heterostructure was studied in the last chapter. The metal-insulator transition (MIT) of SrTiO3 (STO) capped SVO ultrathin films and SVO/STO superlattices were observed. The conductivity enhancement in SVO/STO superlattices compared to the single SVO/STO bilayer is explained by interlayers coupling effects.

KW - PLD

KW - Ferroelectric

KW - Oxide electrode

U2 - 10.3990/1.9789036548090

DO - 10.3990/1.9789036548090

M3 - PhD Thesis - Research UT, graduation UT

SN - 978-90-365-4809-0

PB - University of Twente

CY - Enschede

ER -