Abstract
An atomic force microscope has been used to create nanoscale field-effect transistors and other electronic devices at the interface between two different oxide materials.
Original language | Undefined |
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Pages (from-to) | 279-280 |
Number of pages | 2 |
Journal | Nature nanotechnology |
Volume | 4 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2009 |
Keywords
- IR-72409
- METIS-260483