Abstract
An atomic force microscope has been used to create nanoscale field-effect transistors and other electronic devices at the interface between two different oxide materials.
| Original language | Undefined |
|---|---|
| Pages (from-to) | 279-280 |
| Number of pages | 2 |
| Journal | Nature nanotechnology |
| Volume | 4 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2009 |
Keywords
- IR-72409
- METIS-260483