Oxygen diffusion analysis in transition metal oxides by Low Energy Ion Scattering

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Abstract

The understanding of oxygen interaction and diffusion in ultrathin oxide films is of great importance for their use in many applications, such as electronic devices and protective layers of extreme ultraviolet optics. In this work, we analyse oxygen diffusion in ultrathin oxide films through isotope exchange depth profiling (IEDP) with low energy ion scattering (LEIS). The high sensitivity of LEIS allows quasi-static measurements, where there is no influence of ion damage. LEIS also has good sensitivity to mass differences, which enables the correlation of isotope exchange kinetics at surfaces and in-depth penetration with high accuracy of atomic concentrations. This method was used to study atomic O exposure of films of ZrO2 and MoO3 of 2 nm to 10 nm, which were reactively deposited via DC magnetron sputtering. The diffusion profiles indicate a higher diffusion constant in the outermost monolayers of the oxide film, which may be caused by presence of oxygen vacancies in the film.
Original languageEnglish
Publication statusPublished - 22 Jan 2019
EventPhysics@Veldhoven 2019 - De Koningshof, Veldhoven, Netherlands
Duration: 22 Jan 201923 Jan 2019
https://www.nwo.nl/en/news-and-events/events/physicsveldhoven

Conference

ConferencePhysics@Veldhoven 2019
CountryNetherlands
CityVeldhoven
Period22/01/1923/01/19
Internet address

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