Parallel electron-hole bilayer conductivity from electronic interface reconstruction

R. Pentcheva; Mark Huijben; K. Otte; W.E. Pickett; J.E. Kleibeuker; J. Huijben; J.A. Boschker; D. Kockmann; W. Siemons; Gertjan Koster; Henricus J.W. Zandvliet; Augustinus J.H.M. Rijnders; David H.A. Blank; Johannes W.M. Hilgenkamp; Alexander Brinkman

doi:10.1103/PhysRevLett.104.166804

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

R. Pentcheva, Mark Huijben, K. Otte, W.E. Pickett, J.E. Kleibeuker, J. Huijben, J.A. Boschker, D. Kockmann, W. Siemons, Gertjan Koster, Henricus J.W. Zandvliet, Augustinus J.H.M. Rijnders, David H.A. Blank, Johannes W.M. Hilgenkamp, Alexander Brinkman

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Abstract

The perovskite SrTiO3-LaAlO3 structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO3 capping layer prevents atomic reconstruction at the LaAlO3 surface and triggers the electronic reconstruction at a significantly lower LaAlO3 film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.

Original language	English
Pages (from-to)	-166804
Journal	Physical review letters
Volume	104
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevLett.104.166804
Publication status	Published - 2010

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Pentcheva, R., Huijben, M., Otte, K., Pickett, W. E., Kleibeuker, J. E., Huijben, J., Boschker, J. A., Kockmann, D., Siemons, W., Koster, G., Zandvliet, H. J. W., Rijnders, A. J. H. M., Blank, D. H. A., Hilgenkamp, J. W. M., & Brinkman, A. (2010). Parallel electron-hole bilayer conductivity from electronic interface reconstruction. Physical review letters, 104(16), -166804. https://doi.org/10.1103/PhysRevLett.104.166804

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title = "Parallel electron-hole bilayer conductivity from electronic interface reconstruction",

abstract = "The perovskite SrTiO3-LaAlO3 structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO3 capping layer prevents atomic reconstruction at the LaAlO3 surface and triggers the electronic reconstruction at a significantly lower LaAlO3 film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.",

author = "R. Pentcheva and Mark Huijben and K. Otte and W.E. Pickett and J.E. Kleibeuker and J. Huijben and J.A. Boschker and D. Kockmann and W. Siemons and Gertjan Koster and Zandvliet, {Henricus J.W.} and Rijnders, {Augustinus J.H.M.} and Blank, {David H.A.} and Hilgenkamp, {Johannes W.M.} and Alexander Brinkman",

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doi = "10.1103/PhysRevLett.104.166804",

language = "English",

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Pentcheva, R, Huijben, M, Otte, K, Pickett, WE, Kleibeuker, JE, Huijben, J, Boschker, JA, Kockmann, D, Siemons, W, Koster, G , Zandvliet, HJW , Rijnders, AJHM, Blank, DHA, Hilgenkamp, JWM & Brinkman, A 2010, 'Parallel electron-hole bilayer conductivity from electronic interface reconstruction', Physical review letters, vol. 104, no. 16, pp. -166804. https://doi.org/10.1103/PhysRevLett.104.166804

TY - JOUR

T1 - Parallel electron-hole bilayer conductivity from electronic interface reconstruction

AU - Pentcheva, R.

AU - Huijben, Mark

AU - Otte, K.

AU - Pickett, W.E.

AU - Kleibeuker, J.E.

AU - Huijben, J.

AU - Boschker, J.A.

AU - Kockmann, D.

AU - Siemons, W.

AU - Koster, Gertjan

AU - Zandvliet, Henricus J.W.

AU - Rijnders, Augustinus J.H.M.

AU - Blank, David H.A.

AU - Hilgenkamp, Johannes W.M.

AU - Brinkman, Alexander

PY - 2010

Y1 - 2010

N2 - The perovskite SrTiO3-LaAlO3 structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO3 capping layer prevents atomic reconstruction at the LaAlO3 surface and triggers the electronic reconstruction at a significantly lower LaAlO3 film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.

AB - The perovskite SrTiO3-LaAlO3 structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO3 capping layer prevents atomic reconstruction at the LaAlO3 surface and triggers the electronic reconstruction at a significantly lower LaAlO3 film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.

U2 - 10.1103/PhysRevLett.104.166804

DO - 10.1103/PhysRevLett.104.166804

M3 - Article

SN - 0031-9007

VL - 104

SP - -166804

JO - Physical review letters

JF - Physical review letters

IS - 16

ER -

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

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