Parallel electron-hole bilayer conductivity from electronic interface reconstruction

R. Pentcheva, Mark Huijben, K. Otte, W.E. Pickett, J.E. Kleibeuker, J. Huijben, J.A. Boschker, D. Kockmann, W. Siemons, Gertjan Koster, Henricus J.W. Zandvliet, Augustinus J.H.M. Rijnders, David H.A. Blank, Johannes W.M. Hilgenkamp, Alexander Brinkman

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Abstract

The perovskite SrTiO3-LaAlO3 structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO3 capping layer prevents atomic reconstruction at the LaAlO3 surface and triggers the electronic reconstruction at a significantly lower LaAlO3 film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.
Original languageEnglish
Pages (from-to)-166804
JournalPhysical review letters
Volume104
Issue number16
DOIs
Publication statusPublished - 2010

Keywords

  • METIS-266591
  • IR-72315

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