Passivation and characterization of charge defects in ambipolar silicon quantum dots

P.C. Spruijtenburg, Sergei Amitonov, Filipp Mueller, Wilfred Gerard van der Wiel, Floris Arnoud Zwanenburg

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    16 Citations (Scopus)
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    In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al2O3 overlayer, grown by atomic layer deposition. After passivation of the majority of charge defects with annealing we can electrostatically define hole quantum dots up to 180 nm in length. Our ambipolar structures reveal amphoteric charge defects that remain after annealing with charging energies of 10 meV in both the positive and negative charge state.
    Original languageEnglish
    Article number38127
    Number of pages7
    JournalScientific reports
    Publication statusPublished - 6 Dec 2016


    • interfaces and thin films
    • EWI-27629
    • EC Grant Agreement nr.: FP7/610637
    • METIS-321686
    • Surfaces
    • IR-103177
    • Quantum dots


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