The pattern dependency of pure-boron (PureB) layer chemical-vapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yields lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates.
|Title of host publication||Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2|
|Number of pages||10|
|Publication status||Published - 19 Nov 2012|
|Event||221st ECS Meeting 2012: 221st ECS Meeting - Washington State Convention Center , Seattle, United States|
Duration: 6 May 2012 → 10 May 2012
|Conference||221st ECS Meeting 2012|
|Period||6/05/12 → 10/05/12|