Pattern dependency of pure-boron-layer chemical-vapor depositions

V. Mohammadi*, W.B. de Boer, T.L.M. Scholtes, L.K. Nanver

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    4 Citations (Scopus)


    The pattern dependency of pure-boron (PureB) layer chemical-vapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yields lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates.

    Original languageEnglish
    Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2
    Number of pages10
    Publication statusPublished - 19 Nov 2012
    Event221st ECS Meeting 2012: 221st ECS Meeting - Washington State Convention Center , Seattle, United States
    Duration: 6 May 201210 May 2012

    Publication series

    NameECS Transactions
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737


    Conference221st ECS Meeting 2012
    Country/TerritoryUnited States
    Internet address

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