Pattern dependency of pure-boron-layer chemical-vapor depositions

V. Mohammadi, W. B. De Boer, T. L.M. Scholtes, L. K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

The pattern dependency of pure-boron (PureB) layer chemical-vapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yields lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2
Pages39-48
Number of pages10
Edition6
DOIs
Publication statusPublished - 19 Nov 2012
Event221st ECS Meeting 2012: 221st ECS Meeting - Washington State Convention Center , Seattle, United States
Duration: 6 May 201210 May 2012
https://www.electrochem.org/221

Publication series

NameECS Transactions
Number6
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference221st ECS Meeting 2012
CountryUnited States
CitySeattle
Period6/05/1210/05/12
Internet address

Fingerprint

Deposition rates
Boron
Chemical vapor deposition
Boundary layers
Gases
Flow rate
Oxides

Cite this

Mohammadi, V., De Boer, W. B., Scholtes, T. L. M., & Nanver, L. K. (2012). Pattern dependency of pure-boron-layer chemical-vapor depositions. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 (6 ed., pp. 39-48). (ECS Transactions; Vol. 45, No. 6). https://doi.org/10.1149/1.3700937
Mohammadi, V. ; De Boer, W. B. ; Scholtes, T. L.M. ; Nanver, L. K. / Pattern dependency of pure-boron-layer chemical-vapor depositions. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2. 6. ed. 2012. pp. 39-48 (ECS Transactions; 6).
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Mohammadi, V, De Boer, WB, Scholtes, TLM & Nanver, LK 2012, Pattern dependency of pure-boron-layer chemical-vapor depositions. in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2. 6 edn, ECS Transactions, no. 6, vol. 45, pp. 39-48, 221st ECS Meeting 2012, Seattle, United States, 6/05/12. https://doi.org/10.1149/1.3700937

Pattern dependency of pure-boron-layer chemical-vapor depositions. / Mohammadi, V.; De Boer, W. B.; Scholtes, T. L.M.; Nanver, L. K.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2. 6. ed. 2012. p. 39-48 (ECS Transactions; Vol. 45, No. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Mohammadi V, De Boer WB, Scholtes TLM, Nanver LK. Pattern dependency of pure-boron-layer chemical-vapor depositions. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2. 6 ed. 2012. p. 39-48. (ECS Transactions; 6). https://doi.org/10.1149/1.3700937