Pattern dependency of pure-boron-layer chemical-vapor depositions

V. Mohammadi; W.B. de Boer; T.L.M. Scholtes; L.K. Nanver

doi:10.1149/1.3700937

Pattern dependency of pure-boron-layer chemical-vapor depositions

V. Mohammadi^*, W.B. de Boer, T.L.M. Scholtes, L.K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

6 Downloads (Pure)

Abstract

The pattern dependency of pure-boron (PureB) layer chemical-vapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yields lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates.

Original language	English
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2
Pages	39-48
Number of pages	10
Edition	6
DOIs	https://doi.org/10.1149/1.3700937
Publication status	Published - 19 Nov 2012
Event	221st ECS Meeting 2012: 221st ECS Meeting - Washington State Convention Center , Seattle, United States Duration: 6 May 2012 → 10 May 2012 https://www.electrochem.org/221

Publication series

Name	ECS Transactions
Number	6
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	221st ECS Meeting 2012
Country/Territory	United States
City	Seattle
Period	6/05/12 → 10/05/12
Internet address	https://www.electrochem.org/221

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10.1149/1.3700937

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title = "Pattern dependency of pure-boron-layer chemical-vapor depositions",

abstract = "The pattern dependency of pure-boron (PureB) layer chemical-vapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yields lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates.",

author = "V. Mohammadi and {de Boer}, W.B. and T.L.M. Scholtes and L.K. Nanver",

year = "2012",

month = nov,

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doi = "10.1149/1.3700937",

language = "English",

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booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2",

edition = "6",

note = "221st ECS Meeting 2012 : 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

url = "https://www.electrochem.org/221",

}

Mohammadi, V, de Boer, WB, Scholtes, TLM & Nanver, LK 2012, Pattern dependency of pure-boron-layer chemical-vapor depositions. in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2. 6 edn, ECS Transactions, no. 6, vol. 45, pp. 39-48, 221st ECS Meeting 2012, Seattle, Washington, United States, 6/05/12. https://doi.org/10.1149/1.3700937

Pattern dependency of pure-boron-layer chemical-vapor depositions. / Mohammadi, V.; de Boer, W.B.; Scholtes, T.L.M. et al.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2. 6. ed. 2012. p. 39-48 (ECS Transactions; Vol. 45, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Pattern dependency of pure-boron-layer chemical-vapor depositions

AU - Mohammadi, V.

AU - de Boer, W.B.

AU - Scholtes, T.L.M.

AU - Nanver, L.K.

PY - 2012/11/19

Y1 - 2012/11/19

N2 - The pattern dependency of pure-boron (PureB) layer chemical-vapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yields lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates.

AB - The pattern dependency of pure-boron (PureB) layer chemical-vapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yields lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates.

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ER -

Pattern dependency of pure-boron-layer chemical-vapor depositions

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