PEALD AlN: Controlling growth and film crystallinity

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Abstract

We report on the growth kinetics and material properties of aluminium nitride (AlN) films deposited on Si(111), with plasma enhanced atomic layer deposition (PEALD). Tri-methyl aluminium (TMA) and NH3-plasma were used as the precursors. The ALD window was identified in terms of the process parameters, and it showed that a 0.1 s of TMA pulse, 8 s of NH3-plasma pulse, and 350 oC were the optimal conditions for ALD to occur. In-situ spectroscopic ellipsometry (SE), using a Cauchy optical model, was used to monitor the film growth in real time. The composition of the as-grown AlN films were determined by X-ray photoelectron spectroscopy (XPS), which revealed Al/N compositions of approximately 46% and 53%, also with low impurity (O, C) levels. The film crystallinity, measured with grazing incidence X-ray diffraction (GIXRD), showed polycrystalline hexagonal (wurtzitic) crystalline planes. Finally, several techniques were employed to influence the film crystallinity. These included: ALD at different plasma powers and temperatures, in-situ treatment of the Si(111) wafer with different plasma parameters (composition, power, duration) prior to deposition, and ALD on Si(100) and SiO2 substrates.
Original languageUndefined
Pages (from-to)1036-1042
Number of pages7
JournalPhysica status solidi. C
Volume12
Issue number7
DOIs
Publication statusPublished - 10 Jun 2015

Keywords

  • PEALD-aluminium nitride
  • EWI-26133
  • ALD window
  • Characterization
  • METIS-312665
  • IR-96410
  • Crystallinity
  • PEALD-aluminium nitrideALD windowcharacterizationcrystallinity

Cite this

@article{d9f79e601a7c47ca9a356ee1e0f8c218,
title = "PEALD AlN: Controlling growth and film crystallinity",
abstract = "We report on the growth kinetics and material properties of aluminium nitride (AlN) films deposited on Si(111), with plasma enhanced atomic layer deposition (PEALD). Tri-methyl aluminium (TMA) and NH3-plasma were used as the precursors. The ALD window was identified in terms of the process parameters, and it showed that a 0.1 s of TMA pulse, 8 s of NH3-plasma pulse, and 350 oC were the optimal conditions for ALD to occur. In-situ spectroscopic ellipsometry (SE), using a Cauchy optical model, was used to monitor the film growth in real time. The composition of the as-grown AlN films were determined by X-ray photoelectron spectroscopy (XPS), which revealed Al/N compositions of approximately 46{\%} and 53{\%}, also with low impurity (O, C) levels. The film crystallinity, measured with grazing incidence X-ray diffraction (GIXRD), showed polycrystalline hexagonal (wurtzitic) crystalline planes. Finally, several techniques were employed to influence the film crystallinity. These included: ALD at different plasma powers and temperatures, in-situ treatment of the Si(111) wafer with different plasma parameters (composition, power, duration) prior to deposition, and ALD on Si(100) and SiO2 substrates.",
keywords = "PEALD-aluminium nitride, EWI-26133, ALD window, Characterization, METIS-312665, IR-96410, Crystallinity, PEALD-aluminium nitrideALD windowcharacterizationcrystallinity",
author = "Sourish Banerjee and Aarnink, {Antonius A.I.} and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",
note = "eemcs-eprint-26133",
year = "2015",
month = "6",
day = "10",
doi = "10.1002/pssc.201510039",
language = "Undefined",
volume = "12",
pages = "1036--1042",
journal = "Physica status solidi. C",
issn = "1610-1634",
publisher = "Wiley-VCH Verlag",
number = "7",

}

PEALD AlN: Controlling growth and film crystallinity. / Banerjee, Sourish; Aarnink, Antonius A.I.; van de Kruijs, Robbert Wilhelmus Elisabeth; Kovalgin, Alexeij Y.; Schmitz, Jurriaan.

In: Physica status solidi. C, Vol. 12, No. 7, 10.06.2015, p. 1036-1042.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - PEALD AlN: Controlling growth and film crystallinity

AU - Banerjee, Sourish

AU - Aarnink, Antonius A.I.

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Kovalgin, Alexeij Y.

AU - Schmitz, Jurriaan

N1 - eemcs-eprint-26133

PY - 2015/6/10

Y1 - 2015/6/10

N2 - We report on the growth kinetics and material properties of aluminium nitride (AlN) films deposited on Si(111), with plasma enhanced atomic layer deposition (PEALD). Tri-methyl aluminium (TMA) and NH3-plasma were used as the precursors. The ALD window was identified in terms of the process parameters, and it showed that a 0.1 s of TMA pulse, 8 s of NH3-plasma pulse, and 350 oC were the optimal conditions for ALD to occur. In-situ spectroscopic ellipsometry (SE), using a Cauchy optical model, was used to monitor the film growth in real time. The composition of the as-grown AlN films were determined by X-ray photoelectron spectroscopy (XPS), which revealed Al/N compositions of approximately 46% and 53%, also with low impurity (O, C) levels. The film crystallinity, measured with grazing incidence X-ray diffraction (GIXRD), showed polycrystalline hexagonal (wurtzitic) crystalline planes. Finally, several techniques were employed to influence the film crystallinity. These included: ALD at different plasma powers and temperatures, in-situ treatment of the Si(111) wafer with different plasma parameters (composition, power, duration) prior to deposition, and ALD on Si(100) and SiO2 substrates.

AB - We report on the growth kinetics and material properties of aluminium nitride (AlN) films deposited on Si(111), with plasma enhanced atomic layer deposition (PEALD). Tri-methyl aluminium (TMA) and NH3-plasma were used as the precursors. The ALD window was identified in terms of the process parameters, and it showed that a 0.1 s of TMA pulse, 8 s of NH3-plasma pulse, and 350 oC were the optimal conditions for ALD to occur. In-situ spectroscopic ellipsometry (SE), using a Cauchy optical model, was used to monitor the film growth in real time. The composition of the as-grown AlN films were determined by X-ray photoelectron spectroscopy (XPS), which revealed Al/N compositions of approximately 46% and 53%, also with low impurity (O, C) levels. The film crystallinity, measured with grazing incidence X-ray diffraction (GIXRD), showed polycrystalline hexagonal (wurtzitic) crystalline planes. Finally, several techniques were employed to influence the film crystallinity. These included: ALD at different plasma powers and temperatures, in-situ treatment of the Si(111) wafer with different plasma parameters (composition, power, duration) prior to deposition, and ALD on Si(100) and SiO2 substrates.

KW - PEALD-aluminium nitride

KW - EWI-26133

KW - ALD window

KW - Characterization

KW - METIS-312665

KW - IR-96410

KW - Crystallinity

KW - PEALD-aluminium nitrideALD windowcharacterizationcrystallinity

U2 - 10.1002/pssc.201510039

DO - 10.1002/pssc.201510039

M3 - Article

VL - 12

SP - 1036

EP - 1042

JO - Physica status solidi. C

JF - Physica status solidi. C

SN - 1610-1634

IS - 7

ER -