PECVD silicon nitride diaphragms for condenser microphones

P.R. Scheeper; J.A. Voorthuyzen; P. Bergveld

doi:10.1016/0925-4005(91)80180-R

PECVD silicon nitride diaphragms for condenser microphones

P.R. Scheeper, J.A. Voorthuyzen, P. Bergveld

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Abstract

The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile stress. Aluminium can be etched selectively with respect to the silicon nitride films. Using aluminium as a sacrificial layer, 300 × 300 μm silicon nitride diaphragms have been made. Admittance measurements on silicon nitride capacitances have shown that the insulating properties are sufficiently good for application as a microphone diaphragm.

Original language	English
Pages (from-to)	79-84
Number of pages	6
Journal	Sensors and Actuators B: Chemical
Volume	4
Issue number	1-2
DOIs	https://doi.org/10.1016/0925-4005(91)80180-R
Publication status	Published - 1991

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title = "PECVD silicon nitride diaphragms for condenser microphones",

abstract = "The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile stress. Aluminium can be etched selectively with respect to the silicon nitride films. Using aluminium as a sacrificial layer, 300 × 300 μm silicon nitride diaphragms have been made. Admittance measurements on silicon nitride capacitances have shown that the insulating properties are sufficiently good for application as a microphone diaphragm.",

author = "P.R. Scheeper and J.A. Voorthuyzen and P. Bergveld",

year = "1991",

doi = "10.1016/0925-4005(91)80180-R",

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T1 - PECVD silicon nitride diaphragms for condenser microphones

AU - Scheeper, P.R.

AU - Voorthuyzen, J.A.

AU - Bergveld, P.

PY - 1991

Y1 - 1991

N2 - The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile stress. Aluminium can be etched selectively with respect to the silicon nitride films. Using aluminium as a sacrificial layer, 300 × 300 μm silicon nitride diaphragms have been made. Admittance measurements on silicon nitride capacitances have shown that the insulating properties are sufficiently good for application as a microphone diaphragm.

AB - The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile stress. Aluminium can be etched selectively with respect to the silicon nitride films. Using aluminium as a sacrificial layer, 300 × 300 μm silicon nitride diaphragms have been made. Admittance measurements on silicon nitride capacitances have shown that the insulating properties are sufficiently good for application as a microphone diaphragm.

U2 - 10.1016/0925-4005(91)80180-R

DO - 10.1016/0925-4005(91)80180-R

M3 - Article

SN - 0925-4005

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EP - 84

JO - Sensors and Actuators B: Chemical

JF - Sensors and Actuators B: Chemical

IS - 1-2

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PECVD silicon nitride diaphragms for condenser microphones

Abstract

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