PECVD silicon nitride diaphragms for condenser microphones

P.R. Scheeper, J.A. Voorthuyzen, P. Bergveld

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    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile stress. Aluminium can be etched selectively with respect to the silicon nitride films. Using aluminium as a sacrificial layer, 300 × 300 μm silicon nitride diaphragms have been made. Admittance measurements on silicon nitride capacitances have shown that the insulating properties are sufficiently good for application as a microphone diaphragm.
    Original languageEnglish
    Pages (from-to)79-84
    Number of pages6
    JournalSensors and Actuators B: Chemical
    Issue number1-2
    Publication statusPublished - 1991


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