Pellicle films supporting the ramp to HVM with EUV

P.J. van Zwol; M. Nasalevich; W. Pim Voorthuijzen; E. Kurganova; A. Notenboom; D.F. Vles; M. Peter; W. Symens; A. J.M. Giesbers; J. H. Klootwijk; R. W.E. Van De Kruijs; W.J. Zande

doi:10.1117/12.2280560

Pellicle films supporting the ramp to HVM with EUV

P.J. van Zwol, M. Nasalevich, W. Pim Voorthuijzen, E. Kurganova, A. Notenboom, D.F. Vles, M. Peter, W. Symens, A. J.M. Giesbers, J. H. Klootwijk, R. W.E. Van De Kruijs, W.J. Zande

XUV Optics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

15 Citations (Scopus)

4 Downloads (Pure)

Abstract

EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate progress in cap layer design for increased EUV transmission and infrared emission of the Polysilicon-film. In our research lab we obtained EUV transmission of 90% and good emissivity for a fully capped pSi film. We also discuss results on next generation EUV pellicle films. These include metal-silicides and graphite. Next-gen film performance is compared to the current generation pSi film. These films are expected to be stable at higher operating temperature than pSi. Metal-silicides have the advantage of sharing a similar process flow as that of pSi, while graphite shows ultimate high temperature performance at the expense of a more complicated manufacturing flow. Capping layers are needed here as well and capping strategies are discussed for these film generations.

Original language	English
Title of host publication	Photomask Technology 2017
Publisher	SPIE
Number of pages	9
ISBN (Electronic)	9781510613768
DOIs	https://doi.org/10.1117/12.2280560
Publication status	Published - 2017
Event	SPIE Photomask Technology + EUV Lithography 2017 - Monterey, United States Duration: 11 Sep 2017 → 14 Sep 2017 https://spie.org/conferences-and-exhibitions/past-conferences-and-exhibitions/photomask-technology--euv-lithography-2017

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	10451

Conference

Conference	SPIE Photomask Technology + EUV Lithography 2017
Country	United States
City	Monterey
Period	11/09/17 → 14/09/17
Internet address	https://spie.org/conferences-and-exhibitions/past-conferences-and-exhibitions/photomask-technology--euv-lithography-2017

Access to Document

10.1117/12.2280560

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van Zwol, P. J., Nasalevich, M., Voorthuijzen, W. P., Kurganova, E., Notenboom, A., Vles, D. F., Peter, M., Symens, W., Giesbers, A. J. M., Klootwijk, J. H., Van De Kruijs, R. W. E., & Zande, W. J. (2017). Pellicle films supporting the ramp to HVM with EUV. In Photomask Technology 2017 [104510O] (Proceedings of SPIE; Vol. 10451). SPIE. https://doi.org/10.1117/12.2280560

@inproceedings{03ba2447f2e3474882adc67678af4c8d,

title = "Pellicle films supporting the ramp to HVM with EUV",

abstract = "EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate progress in cap layer design for increased EUV transmission and infrared emission of the Polysilicon-film. In our research lab we obtained EUV transmission of 90% and good emissivity for a fully capped pSi film. We also discuss results on next generation EUV pellicle films. These include metal-silicides and graphite. Next-gen film performance is compared to the current generation pSi film. These films are expected to be stable at higher operating temperature than pSi. Metal-silicides have the advantage of sharing a similar process flow as that of pSi, while graphite shows ultimate high temperature performance at the expense of a more complicated manufacturing flow. Capping layers are needed here as well and capping strategies are discussed for these film generations.",

author = "{van Zwol}, P.J. and M. Nasalevich and Voorthuijzen, {W. Pim} and E. Kurganova and A. Notenboom and D.F. Vles and M. Peter and W. Symens and Giesbers, {A. J.M.} and Klootwijk, {J. H.} and {Van De Kruijs}, {R. W.E.} and W.J. Zande",

year = "2017",

doi = "10.1117/12.2280560",

language = "English",

series = "Proceedings of SPIE",

publisher = "SPIE",

booktitle = "Photomask Technology 2017",

address = "United States",

note = "SPIE Photomask Technology + EUV Lithography 2017 ; Conference date: 11-09-2017 Through 14-09-2017",

url = "https://spie.org/conferences-and-exhibitions/past-conferences-and-exhibitions/photomask-technology--euv-lithography-2017",

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van Zwol, PJ, Nasalevich, M, Voorthuijzen, WP, Kurganova, E, Notenboom, A, Vles, DF, Peter, M, Symens, W, Giesbers, AJM, Klootwijk, JH, Van De Kruijs, RWE & Zande, WJ 2017, Pellicle films supporting the ramp to HVM with EUV. in Photomask Technology 2017., 104510O, Proceedings of SPIE, vol. 10451, SPIE, SPIE Photomask Technology + EUV Lithography 2017, Monterey, United States, 11/09/17. https://doi.org/10.1117/12.2280560

Pellicle films supporting the ramp to HVM with EUV. / van Zwol, P.J.; Nasalevich, M.; Voorthuijzen, W. Pim; Kurganova, E.; Notenboom, A.; Vles, D.F.; Peter, M.; Symens, W.; Giesbers, A. J.M.; Klootwijk, J. H.; Van De Kruijs, R. W.E.; Zande, W.J.

Photomask Technology 2017. SPIE, 2017. 104510O (Proceedings of SPIE; Vol. 10451).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Nasalevich, M.

AU - Voorthuijzen, W. Pim

AU - Kurganova, E.

AU - Notenboom, A.

AU - Vles, D.F.

AU - Peter, M.

AU - Symens, W.

AU - Giesbers, A. J.M.

AU - Klootwijk, J. H.

AU - Van De Kruijs, R. W.E.

AU - Zande, W.J.

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N2 - EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate progress in cap layer design for increased EUV transmission and infrared emission of the Polysilicon-film. In our research lab we obtained EUV transmission of 90% and good emissivity for a fully capped pSi film. We also discuss results on next generation EUV pellicle films. These include metal-silicides and graphite. Next-gen film performance is compared to the current generation pSi film. These films are expected to be stable at higher operating temperature than pSi. Metal-silicides have the advantage of sharing a similar process flow as that of pSi, while graphite shows ultimate high temperature performance at the expense of a more complicated manufacturing flow. Capping layers are needed here as well and capping strategies are discussed for these film generations.

AB - EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate progress in cap layer design for increased EUV transmission and infrared emission of the Polysilicon-film. In our research lab we obtained EUV transmission of 90% and good emissivity for a fully capped pSi film. We also discuss results on next generation EUV pellicle films. These include metal-silicides and graphite. Next-gen film performance is compared to the current generation pSi film. These films are expected to be stable at higher operating temperature than pSi. Metal-silicides have the advantage of sharing a similar process flow as that of pSi, while graphite shows ultimate high temperature performance at the expense of a more complicated manufacturing flow. Capping layers are needed here as well and capping strategies are discussed for these film generations.

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PB - SPIE

T2 - SPIE Photomask Technology + EUV Lithography 2017

Y2 - 11 September 2017 through 14 September 2017

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