Abstract
EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate progress in cap layer design for increased EUV transmission and infrared emission of the Polysilicon-film. In our research lab we obtained EUV transmission of 90% and good emissivity for a fully capped pSi film. We also discuss results on next generation EUV pellicle films. These include metal-silicides and graphite. Next-gen film performance is compared to the current generation pSi film. These films are expected to be stable at higher operating temperature than pSi. Metal-silicides have the advantage of sharing a similar process flow as that of pSi, while graphite shows ultimate high temperature performance at the expense of a more complicated manufacturing flow. Capping layers are needed here as well and capping strategies are discussed for these film generations.
Original language | English |
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Title of host publication | Photomask Technology 2017 |
Publisher | SPIE |
Number of pages | 9 |
ISBN (Electronic) | 9781510613768 |
DOIs | |
Publication status | Published - 2017 |
Event | SPIE Photomask Technology + EUV Lithography 2017 - Monterey, United States Duration: 11 Sep 2017 → 14 Sep 2017 https://spie.org/conferences-and-exhibitions/past-conferences-and-exhibitions/photomask-technology--euv-lithography-2017 |
Publication series
Name | Proceedings of SPIE |
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Publisher | SPIE |
Volume | 10451 |
Conference
Conference | SPIE Photomask Technology + EUV Lithography 2017 |
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Country/Territory | United States |
City | Monterey |
Period | 11/09/17 → 14/09/17 |
Internet address |