Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions

Tihomir Knežević, Lis K. Nanver, Tomislav Suligoj

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)

    Abstract

    Interface states at metal-semiconductor or semiconductor-semiconductor interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions that are contacted by metal, can be beneficial for suppressing the injection of majority carriers from the bulk. The effect is more pronounced as the p+n junction depth becomes smaller and it dominates the electrical characteristics of ultrashallow junctions, as, for example sub-10-nm deep pure boron (PureB) diodes. The properties of the perimeter of such an interface play a critical role in the overall electrical characteristics. In this paper, a TCAD simulation study is described where nanometer-deep p+n junctions have an interface hole-layer that forms an energy barrier at the semiconductor-semiconductor interface. The suppression of bulk electron injection is analyzed with respect to the barrier height and the p+n junction depth. Perimeter effects are investigated by 2D simulations showing a detrimental impact on the parasitic majority carrier injection from the bulk in structures with nanometer deep p+n junctions. Other than employing a guard ring, reduction of the perimeter effects by shifting the position of the metal electrode was considered.

    Original languageEnglish
    Title of host publication2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017 - Proceedings
    PublisherIEEE
    Pages72-76
    Number of pages5
    ISBN (Electronic)9789532330922
    DOIs
    Publication statusPublished - 13 Jul 2017
    Event40th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics 2017 - Opatija, Croatia
    Duration: 22 May 201726 May 2017
    Conference number: 40

    Conference

    Conference40th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics 2017
    Abbreviated titleMIPRO 2017
    CountryCroatia
    CityOpatija
    Period22/05/1726/05/17

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