Abstract
A method of writing and erasing conducting nanostructures at the interface between the wide-bandgap insulators LaAlO3 and SrTiO3 is presented. New developments for ltrahigh-density information storage look feasible
Original language | Undefined |
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Pages (from-to) | 270-271 |
Journal | Nature materials |
Volume | 7 |
Issue number | 4 |
DOIs | |
Publication status | Published - Apr 2008 |
Keywords
- IR-59166