Abstract
A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (Co/Cu)4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor structure allows the investigation of energy resolved perpendicular transport properties, and in particular spin-dependent scattering of hot electrons in transition-metal as well as rare-earth-based multilayers.
Original language | Undefined |
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Pages (from-to) | 5260-5263 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 74 |
Issue number | 26 |
DOIs | |
Publication status | Published - 1995 |
Keywords
- METIS-111860
- IR-61218
- EWI-5596
- SMI-SPINTRONICS
- SMI-NE: From 2006 in EWI-NE