Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor

D.J. Monsma; J.C. Lodder; T.J.A. Popma; B. Dieny

doi:10.1103/PhysRevLett.74.5260

Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor

D.J. Monsma, J.C. Lodder, T.J.A. Popma, B. Dieny

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Abstract

A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (Co/Cu)4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor structure allows the investigation of energy resolved perpendicular transport properties, and in particular spin-dependent scattering of hot electrons in transition-metal as well as rare-earth-based multilayers.

Original language	Undefined
Pages (from-to)	5260-5263
Number of pages	4
Journal	Physical review letters
Volume	74
Issue number	26
DOIs	https://doi.org/10.1103/PhysRevLett.74.5260
Publication status	Published - 1995

Keywords

METIS-111860
IR-61218
EWI-5596
SMI-SPINTRONICS
SMI-NE: From 2006 in EWI-NE

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10.1103/PhysRevLett.74.5260

MONSMA1995
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Cite this

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title = "Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor",

abstract = "A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (Co/Cu)4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor structure allows the investigation of energy resolved perpendicular transport properties, and in particular spin-dependent scattering of hot electrons in transition-metal as well as rare-earth-based multilayers.",

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T1 - Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor

AU - Monsma, D.J.

AU - Lodder, J.C.

AU - Popma, T.J.A.

AU - Dieny, B.

N1 - Imported from SMI Reference manager

PY - 1995

Y1 - 1995

N2 - A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (Co/Cu)4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor structure allows the investigation of energy resolved perpendicular transport properties, and in particular spin-dependent scattering of hot electrons in transition-metal as well as rare-earth-based multilayers.

AB - A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (Co/Cu)4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor structure allows the investigation of energy resolved perpendicular transport properties, and in particular spin-dependent scattering of hot electrons in transition-metal as well as rare-earth-based multilayers.

KW - METIS-111860

KW - IR-61218

KW - EWI-5596

KW - SMI-SPINTRONICS

KW - SMI-NE: From 2006 in EWI-NE

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DO - 10.1103/PhysRevLett.74.5260

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JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

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