Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor

D.J. Monsma, J.C. Lodder, T.J.A. Popma, B. Dieny

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    A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (Co/Cu)4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor structure allows the investigation of energy resolved perpendicular transport properties, and in particular spin-dependent scattering of hot electrons in transition-metal as well as rare-earth-based multilayers.
    Original languageUndefined
    Pages (from-to)5260-5263
    Number of pages4
    JournalPhysical review letters
    Issue number26
    Publication statusPublished - 1995


    • METIS-111860
    • IR-61218
    • EWI-5596
    • SMI-NE: From 2006 in EWI-NE

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