Phase‐Coherent Transport in GeSn Alloys on Si (Adv. Electron. Mater. 2/2025): Graphical Abstract

In article number 2300565, Prateek Kaul, Dan Buca, and co-workers perform magneto-transport measurements on Hall bar devices on the novel alloy system GeSn grown on a Si wafer. The measurements reveal robust phase-coherent transport in high Sn concentrations with weak-localization effects and Shubnikov-de Haas oscillations (pictured). These are further used to extract coherence length, mobility and effective mass of Gamma-valley electrons in direct bandgap GeSn, setting forward a baseline for further experiments on the novel material system for its electronics, spintronics, and quantum computing applications.