Photocathodes for a post-processed imaging array

J. Melai; Alexey Lyashenko; Amos Breskin; Harry van der Graaf; Jan Timmermans; Jan Visschers; Cora Salm; Jurriaan Schmitz

Photocathodes for a post-processed imaging array

J. Melai, Alexey Lyashenko, Amos Breskin, Harry van der Graaf, Jan Timmermans, Jan Visschers, Cora Salm, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Preliminary results of a photon detector combining a Micromegas like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in the CMOS compatible InGrid technology, which allows to post-process it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of ~6000 were reached in a singlegrid element operated in Ar/CH4, with a 2% Ion Back Flow fraction returning to the photocathode.

Original language	English
Title of host publication	Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	32-35
Number of pages	4
ISBN (Print)	978-90-73461-62-8
Publication status	Published - 26 Nov 2009
Event	12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands Duration: 26 Nov 2009 → 27 Nov 2009 Conference number: 12

Publication series

Name
Publisher	Technology Foundation STW

Conference

Conference	12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	26/11/09 → 27/11/09

Keywords

CsI photocathode
CMOS post-processing
SC-RID: Radiation Imaging detectors
MICROMEGAS
Gaseous radiation detector
UV photon detection

Access to Document

melai

Cite this

@inproceedings{123dffa78dc142f9ab37ff5d4d53a796,

title = "Photocathodes for a post-processed imaging array",

abstract = "Preliminary results of a photon detector combining a Micromegas like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in the CMOS compatible InGrid technology, which allows to post-process it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of ~6000 were reached in a singlegrid element operated in Ar/CH4, with a 2% Ion Back Flow fraction returning to the photocathode.",

keywords = "CsI photocathode, CMOS post-processing, SC-RID: Radiation Imaging detectors, MICROMEGAS, Gaseous radiation detector, UV photon detection",

author = "J. Melai and Alexey Lyashenko and Amos Breskin and {van der Graaf}, Harry and Jan Timmermans and Jan Visschers and Cora Salm and Jurriaan Schmitz",

year = "2009",

month = nov,

day = "26",

language = "English",

isbn = "978-90-73461-62-8",

publisher = "STW",

pages = "32--35",

booktitle = "Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors",

note = "12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009, SAFE ; Conference date: 26-11-2009 Through 27-11-2009",

}

Melai, J, Lyashenko, A, Breskin, A, van der Graaf, H, Timmermans, J, Visschers, J, Salm, C & Schmitz, J 2009, Photocathodes for a post-processed imaging array. in Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. STW, Utrecht, The Netherlands, pp. 32-35, 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009, Veldhoven, Netherlands, 26/11/09.

TY - GEN

T1 - Photocathodes for a post-processed imaging array

AU - Melai, J.

AU - Lyashenko, Alexey

AU - Breskin, Amos

AU - van der Graaf, Harry

AU - Timmermans, Jan

AU - Visschers, Jan

AU - Salm, Cora

AU - Schmitz, Jurriaan

N1 - Conference code: 12

PY - 2009/11/26

Y1 - 2009/11/26

N2 - Preliminary results of a photon detector combining a Micromegas like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in the CMOS compatible InGrid technology, which allows to post-process it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of ~6000 were reached in a singlegrid element operated in Ar/CH4, with a 2% Ion Back Flow fraction returning to the photocathode.

AB - Preliminary results of a photon detector combining a Micromegas like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in the CMOS compatible InGrid technology, which allows to post-process it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of ~6000 were reached in a singlegrid element operated in Ar/CH4, with a 2% Ion Back Flow fraction returning to the photocathode.

KW - CsI photocathode

KW - CMOS post-processing

KW - SC-RID: Radiation Imaging detectors

KW - MICROMEGAS

KW - Gaseous radiation detector

KW - UV photon detection

M3 - Conference contribution

SN - 978-90-73461-62-8

SP - 32

EP - 35

BT - Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors

PB - STW

CY - Utrecht, The Netherlands

T2 - 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009

Y2 - 26 November 2009 through 27 November 2009

ER -