Photoelectric Effects in Ta2O5-SiO2-Si Structures

J.A. Voorthuyzen, P. Bergveld

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    Abstract

    Investigating the behaviour of ISFETs with a Ta2O5SiO2 dielectric it has been observed that their long-term stability is strongly influenced by previous exposures to daylight. A Ta2O5 layer, as prepared for ISFET application, will become conductive by exposure to optical radiation. This conduction is due to bulk traps with a depth of 1.6–3.2 eV. It is shown that a low temperature anneal step in the presence of an A1 layer on top of the Ta2O5 layer may eliminate these traps and reduce the associated threshold voltage instability.
    Original languageEnglish
    Pages (from-to)350-353
    Number of pages4
    JournalSensors and actuators. B: Chemical
    Volume1
    Issue number1-6
    DOIs
    Publication statusPublished - 1990

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