Photoelectric Effects in Ta2O5-SiO2-Si Structures

J.A. Voorthuyzen; P. Bergveld

doi:10.1016/0925-4005(90)80228-R

Photoelectric Effects in Ta2O5-SiO2-Si Structures

J.A. Voorthuyzen
, P. Bergveld

Research output: Contribution to journal › Article › Academic › peer-review

27 Citations (Scopus)

246 Downloads (Pure)

Abstract

Investigating the behaviour of ISFETs with a Ta2O5SiO2 dielectric it has been observed that their long-term stability is strongly influenced by previous exposures to daylight. A Ta2O5 layer, as prepared for ISFET application, will become conductive by exposure to optical radiation. This conduction is due to bulk traps with a depth of 1.6–3.2 eV. It is shown that a low temperature anneal step in the presence of an A1 layer on top of the Ta2O5 layer may eliminate these traps and reduce the associated threshold voltage instability.

Original language	English
Pages (from-to)	350-353
Number of pages	4
Journal	Sensors and Actuators B: Chemical
Volume	1
Issue number	1-6
DOIs	https://doi.org/10.1016/0925-4005(90)80228-R
Publication status	Published - 1990

Access to Document

10.1016/0925-4005(90)80228-R

Voorthuyzen90photoFinal published version, 343 KB

Cite this

@article{0dbedea43b6e4ef3bed77874fb70efc7,

title = "Photoelectric Effects in Ta2O5-SiO2-Si Structures",

abstract = "Investigating the behaviour of ISFETs with a Ta2O5SiO2 dielectric it has been observed that their long-term stability is strongly influenced by previous exposures to daylight. A Ta2O5 layer, as prepared for ISFET application, will become conductive by exposure to optical radiation. This conduction is due to bulk traps with a depth of 1.6–3.2 eV. It is shown that a low temperature anneal step in the presence of an A1 layer on top of the Ta2O5 layer may eliminate these traps and reduce the associated threshold voltage instability.",

author = "J.A. Voorthuyzen and P. Bergveld",

year = "1990",

doi = "10.1016/0925-4005(90)80228-R",

language = "English",

volume = "1",

pages = "350--353",

journal = "Sensors and Actuators B: Chemical",

issn = "0925-4005",

publisher = "Elsevier B.V.",

number = "1-6",

}

TY - JOUR

T1 - Photoelectric Effects in Ta2O5-SiO2-Si Structures

AU - Voorthuyzen, J.A.

AU - Bergveld, P.

PY - 1990

Y1 - 1990

N2 - Investigating the behaviour of ISFETs with a Ta2O5SiO2 dielectric it has been observed that their long-term stability is strongly influenced by previous exposures to daylight. A Ta2O5 layer, as prepared for ISFET application, will become conductive by exposure to optical radiation. This conduction is due to bulk traps with a depth of 1.6–3.2 eV. It is shown that a low temperature anneal step in the presence of an A1 layer on top of the Ta2O5 layer may eliminate these traps and reduce the associated threshold voltage instability.

AB - Investigating the behaviour of ISFETs with a Ta2O5SiO2 dielectric it has been observed that their long-term stability is strongly influenced by previous exposures to daylight. A Ta2O5 layer, as prepared for ISFET application, will become conductive by exposure to optical radiation. This conduction is due to bulk traps with a depth of 1.6–3.2 eV. It is shown that a low temperature anneal step in the presence of an A1 layer on top of the Ta2O5 layer may eliminate these traps and reduce the associated threshold voltage instability.

U2 - 10.1016/0925-4005(90)80228-R

DO - 10.1016/0925-4005(90)80228-R

M3 - Article

SN - 0925-4005

VL - 1

SP - 350

EP - 353

JO - Sensors and Actuators B: Chemical

JF - Sensors and Actuators B: Chemical

IS - 1-6

ER -

Photoelectric Effects in Ta2O5-SiO2-Si Structures

Abstract

Access to Document

Fingerprint

Cite this