Photoluminescence and AFM characterisation of photochemically etched highly resistive n-type silicon

T. Hadjersi, Ernst S. Kooij, N. Yamamoto, K. Sakamaki, H. Takai, N. Gabouze

Research output: Contribution to conferencePoster

Original languageUndefined
Pages-
Publication statusPublished - 14 Mar 2004

Keywords

  • METIS-220986

Cite this

Hadjersi, T., Kooij, E. S., Yamamoto, N., Sakamaki, K., Takai, H., & Gabouze, N. (2004). Photoluminescence and AFM characterisation of photochemically etched highly resistive n-type silicon. -.