Photon imaging using post-processed CMOS chips

J. Melai

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    108 Downloads (Pure)

    Abstract

    This thesis presents our work on an integrated photon detector made by post-processing of CMOS sensor arrays. The aim of the post-processing is to combine all elements of the detector into a single monolithic device. These elements include a photocathode to convert photon radiation into electronic signals (in the extreme case this conversion is from a single photon into a single electron), an electron multiplication structure to increase the magnitude of the signal pulse and a position sensitive recording element to register the place, time and size of the electron charge pulse. The recording element is part of a CMOS imaging IC. The rest of the detector structure is processed directly onto the CMOS substrate. This method is called postprocessing.
    Original languageUndefined
    Awarding Institution
    • University of Twente
    Supervisors/Advisors
    • Schmitz, Jurriaan , Supervisor
    • Salm, Cora , Advisor
    Thesis sponsors
    Award date21 Dec 2010
    Place of PublicationEnschede
    Publisher
    Print ISBNs978-90-365-3132-0
    DOIs
    Publication statusPublished - 21 Dec 2010

    Keywords

    • EWI-19050
    • SC-RID: Radiation Imaging detectors
    • METIS-275766
    • IR-75409

    Cite this

    Melai, J.. / Photon imaging using post-processed CMOS chips. Enschede : University of Twente, 2010. 126 p.
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    keywords = "EWI-19050, SC-RID: Radiation Imaging detectors, METIS-275766, IR-75409",
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    Photon imaging using post-processed CMOS chips. / Melai, J.

    Enschede : University of Twente, 2010. 126 p.

    Research output: ThesisPhD Thesis - Research UT, graduation UT

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    PY - 2010/12/21

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    N2 - This thesis presents our work on an integrated photon detector made by post-processing of CMOS sensor arrays. The aim of the post-processing is to combine all elements of the detector into a single monolithic device. These elements include a photocathode to convert photon radiation into electronic signals (in the extreme case this conversion is from a single photon into a single electron), an electron multiplication structure to increase the magnitude of the signal pulse and a position sensitive recording element to register the place, time and size of the electron charge pulse. The recording element is part of a CMOS imaging IC. The rest of the detector structure is processed directly onto the CMOS substrate. This method is called postprocessing.

    AB - This thesis presents our work on an integrated photon detector made by post-processing of CMOS sensor arrays. The aim of the post-processing is to combine all elements of the detector into a single monolithic device. These elements include a photocathode to convert photon radiation into electronic signals (in the extreme case this conversion is from a single photon into a single electron), an electron multiplication structure to increase the magnitude of the signal pulse and a position sensitive recording element to register the place, time and size of the electron charge pulse. The recording element is part of a CMOS imaging IC. The rest of the detector structure is processed directly onto the CMOS substrate. This method is called postprocessing.

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    KW - SC-RID: Radiation Imaging detectors

    KW - METIS-275766

    KW - IR-75409

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    DO - 10.3990/1.9789036531320

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