Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials

Mustafa Sefünç; P.M. Muilwijk; R.T. Eachambadi; R.F. Russo; Hendricus A.G.M. van Wolferen; G. Sengo; Edward Bernhardi; Markus Pollnau; Sonia Maria García Blanco

Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials

Mustafa Sefünç, P.M. Muilwijk, R.T. Eachambadi, R.F. Russo, Hendricus A.G.M. van Wolferen, G. Sengo, Edward Bernhardi, Markus Pollnau, Sonia Maria García Blanco

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.

Original language	English
Title of host publication	17th Annual Symposium of the IEEE Photonics Benelux Chapter
Place of Publication	Mons, Belgium
Publisher	University of Mons
Pages	323-326
Number of pages	4
ISBN (Print)	978-2-8052-0184-4
Publication status	Published - 29 Nov 2012
Event	17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012 - Mons, Belgium Duration: 29 Nov 2012 → 30 Nov 2012 Conference number: 17 http://www.telecom.fpms.ac.be/IPS_symposium2012/

Conference

Conference	17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012
Country/Territory	Belgium
City	Mons
Period	29/11/12 → 30/11/12
Internet address	http://www.telecom.fpms.ac.be/IPS_symposium2012/

Keywords

IOMS-APD: Active Photonic Devices
METIS-293236
IR-83523
EWI-22665

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Sefünç, M., Muilwijk, P. M., Eachambadi, R. T., Russo, R. F., van Wolferen, H. A. G. M., Sengo, G., Bernhardi, E., Pollnau, M., & García Blanco, S. M. (2012). Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. In 17th Annual Symposium of the IEEE Photonics Benelux Chapter (pp. 323-326). University of Mons.

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title = "Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials",

abstract = "Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.",

keywords = "IOMS-APD: Active Photonic Devices, METIS-293236, IR-83523, EWI-22665",

author = "Mustafa Sef{\"u}n{\c c} and P.M. Muilwijk and R.T. Eachambadi and R.F. Russo and {van Wolferen}, {Hendricus A.G.M.} and G. Sengo and Edward Bernhardi and Markus Pollnau and {Garc{\'i}a Blanco}, {Sonia Maria}",

year = "2012",

month = nov,

day = "29",

language = "English",

isbn = "978-2-8052-0184-4",

pages = "323--326",

booktitle = "17th Annual Symposium of the IEEE Photonics Benelux Chapter",

publisher = "University of Mons",

note = "17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012 ; Conference date: 29-11-2012 Through 30-11-2012",

url = "http://www.telecom.fpms.ac.be/IPS_symposium2012/",

}

Sefünç, M, Muilwijk, PM, Eachambadi, RT, Russo, RF, van Wolferen, HAGM, Sengo, G, Bernhardi, E, Pollnau, M & García Blanco, SM 2012, Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. in 17th Annual Symposium of the IEEE Photonics Benelux Chapter. University of Mons, Mons, Belgium, pp. 323-326, 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012, Mons, Belgium, 29/11/12.

Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. / Sefünç, Mustafa; Muilwijk, P.M.; Eachambadi, R.T. et al.
17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium: University of Mons, 2012. p. 323-326.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials

AU - Sefünç, Mustafa

AU - Muilwijk, P.M.

AU - Eachambadi, R.T.

AU - Russo, R.F.

AU - van Wolferen, Hendricus A.G.M.

AU - Sengo, G.

AU - Bernhardi, Edward

AU - Pollnau, Markus

AU - García Blanco, Sonia Maria

N1 - Conference code: 17

PY - 2012/11/29

Y1 - 2012/11/29

N2 - Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.

AB - Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.

KW - IOMS-APD: Active Photonic Devices

KW - METIS-293236

KW - IR-83523

KW - EWI-22665

M3 - Conference contribution

SN - 978-2-8052-0184-4

SP - 323

EP - 326

BT - 17th Annual Symposium of the IEEE Photonics Benelux Chapter

PB - University of Mons

CY - Mons, Belgium

T2 - 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012

Y2 - 29 November 2012 through 30 November 2012

ER -

Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials

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Keywords

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