Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials

Mustafa Sefünç, P.M. Muilwijk, R.T. Eachambadi, R.F. Russo, Hendricus A.G.M. van Wolferen, G. Sengo, Edward Bernhardi, Markus Pollnau, Sonia Maria García Blanco

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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Abstract

Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.
Original languageEnglish
Title of host publication17th Annual Symposium of the IEEE Photonics Benelux Chapter
Place of PublicationMons, Belgium
PublisherFaculty of Engineering, University of Mons
Pages323-326
Number of pages4
ISBN (Print)978-2-8052-0184-4
Publication statusPublished - 29 Nov 2012
Event17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012 - Mons, Belgium
Duration: 29 Nov 201230 Nov 2012
Conference number: 17
http://www.telecom.fpms.ac.be/IPS_symposium2012/

Conference

Conference17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012
CountryBelgium
CityMons
Period29/11/1230/11/12
Internet address

Fingerprint

tungstates
rare earth elements
chips
photonics
fabrication
potassium
platforms
ion beams
broadband
wavelengths
ions

Keywords

  • IOMS-APD: Active Photonic Devices
  • METIS-293236
  • IR-83523
  • EWI-22665

Cite this

Sefünç, M., Muilwijk, P. M., Eachambadi, R. T., Russo, R. F., van Wolferen, H. A. G. M., Sengo, G., ... García Blanco, S. M. (2012). Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. In 17th Annual Symposium of the IEEE Photonics Benelux Chapter (pp. 323-326). Mons, Belgium: Faculty of Engineering, University of Mons.
Sefünç, Mustafa ; Muilwijk, P.M. ; Eachambadi, R.T. ; Russo, R.F. ; van Wolferen, Hendricus A.G.M. ; Sengo, G. ; Bernhardi, Edward ; Pollnau, Markus ; García Blanco, Sonia Maria. / Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. 17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium : Faculty of Engineering, University of Mons, 2012. pp. 323-326
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Sefünç, M, Muilwijk, PM, Eachambadi, RT, Russo, RF, van Wolferen, HAGM, Sengo, G, Bernhardi, E, Pollnau, M & García Blanco, SM 2012, Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. in 17th Annual Symposium of the IEEE Photonics Benelux Chapter. Faculty of Engineering, University of Mons, Mons, Belgium, pp. 323-326, 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012, Mons, Belgium, 29/11/12.

Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. / Sefünç, Mustafa; Muilwijk, P.M.; Eachambadi, R.T.; Russo, R.F.; van Wolferen, Hendricus A.G.M.; Sengo, G.; Bernhardi, Edward; Pollnau, Markus; García Blanco, Sonia Maria.

17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium : Faculty of Engineering, University of Mons, 2012. p. 323-326.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials

AU - Sefünç, Mustafa

AU - Muilwijk, P.M.

AU - Eachambadi, R.T.

AU - Russo, R.F.

AU - van Wolferen, Hendricus A.G.M.

AU - Sengo, G.

AU - Bernhardi, Edward

AU - Pollnau, Markus

AU - García Blanco, Sonia Maria

PY - 2012/11/29

Y1 - 2012/11/29

N2 - Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.

AB - Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.

KW - IOMS-APD: Active Photonic Devices

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KW - IR-83523

KW - EWI-22665

M3 - Conference contribution

SN - 978-2-8052-0184-4

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BT - 17th Annual Symposium of the IEEE Photonics Benelux Chapter

PB - Faculty of Engineering, University of Mons

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Sefünç M, Muilwijk PM, Eachambadi RT, Russo RF, van Wolferen HAGM, Sengo G et al. Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. In 17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium: Faculty of Engineering, University of Mons. 2012. p. 323-326