Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials

Mustafa Sefünç, P.M. Muilwijk, R.T. Eachambadi, R.F. Russo, Hendricus A.G.M. van Wolferen, G. Sengo, Edward Bernhardi, Markus Pollnau, Sonia Maria García Blanco

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    3 Downloads (Pure)

    Abstract

    Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.
    Original languageEnglish
    Title of host publication17th Annual Symposium of the IEEE Photonics Benelux Chapter
    Place of PublicationMons, Belgium
    PublisherFaculty of Engineering, University of Mons
    Pages323-326
    Number of pages4
    ISBN (Print)978-2-8052-0184-4
    Publication statusPublished - 29 Nov 2012
    Event17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012 - Mons, Belgium
    Duration: 29 Nov 201230 Nov 2012
    Conference number: 17
    http://www.telecom.fpms.ac.be/IPS_symposium2012/

    Conference

    Conference17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012
    CountryBelgium
    CityMons
    Period29/11/1230/11/12
    Internet address

    Fingerprint

    tungstates
    rare earth elements
    chips
    photonics
    fabrication
    potassium
    platforms
    ion beams
    broadband
    wavelengths
    ions

    Keywords

    • IOMS-APD: Active Photonic Devices
    • METIS-293236
    • IR-83523
    • EWI-22665

    Cite this

    Sefünç, M., Muilwijk, P. M., Eachambadi, R. T., Russo, R. F., van Wolferen, H. A. G. M., Sengo, G., ... García Blanco, S. M. (2012). Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. In 17th Annual Symposium of the IEEE Photonics Benelux Chapter (pp. 323-326). Mons, Belgium: Faculty of Engineering, University of Mons.
    Sefünç, Mustafa ; Muilwijk, P.M. ; Eachambadi, R.T. ; Russo, R.F. ; van Wolferen, Hendricus A.G.M. ; Sengo, G. ; Bernhardi, Edward ; Pollnau, Markus ; García Blanco, Sonia Maria. / Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. 17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium : Faculty of Engineering, University of Mons, 2012. pp. 323-326
    @inproceedings{55da5ffcba9546f083ba48c0568c32ca,
    title = "Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials",
    abstract = "Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.",
    keywords = "IOMS-APD: Active Photonic Devices, METIS-293236, IR-83523, EWI-22665",
    author = "Mustafa Sef{\"u}n{\cc} and P.M. Muilwijk and R.T. Eachambadi and R.F. Russo and {van Wolferen}, {Hendricus A.G.M.} and G. Sengo and Edward Bernhardi and Markus Pollnau and {Garc{\'i}a Blanco}, {Sonia Maria}",
    year = "2012",
    month = "11",
    day = "29",
    language = "English",
    isbn = "978-2-8052-0184-4",
    pages = "323--326",
    booktitle = "17th Annual Symposium of the IEEE Photonics Benelux Chapter",
    publisher = "Faculty of Engineering, University of Mons",

    }

    Sefünç, M, Muilwijk, PM, Eachambadi, RT, Russo, RF, van Wolferen, HAGM, Sengo, G, Bernhardi, E, Pollnau, M & García Blanco, SM 2012, Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. in 17th Annual Symposium of the IEEE Photonics Benelux Chapter. Faculty of Engineering, University of Mons, Mons, Belgium, pp. 323-326, 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012, Mons, Belgium, 29/11/12.

    Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. / Sefünç, Mustafa; Muilwijk, P.M.; Eachambadi, R.T.; Russo, R.F.; van Wolferen, Hendricus A.G.M.; Sengo, G.; Bernhardi, Edward; Pollnau, Markus; García Blanco, Sonia Maria.

    17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium : Faculty of Engineering, University of Mons, 2012. p. 323-326.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    TY - GEN

    T1 - Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials

    AU - Sefünç, Mustafa

    AU - Muilwijk, P.M.

    AU - Eachambadi, R.T.

    AU - Russo, R.F.

    AU - van Wolferen, Hendricus A.G.M.

    AU - Sengo, G.

    AU - Bernhardi, Edward

    AU - Pollnau, Markus

    AU - García Blanco, Sonia Maria

    PY - 2012/11/29

    Y1 - 2012/11/29

    N2 - Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.

    AB - Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.

    KW - IOMS-APD: Active Photonic Devices

    KW - METIS-293236

    KW - IR-83523

    KW - EWI-22665

    M3 - Conference contribution

    SN - 978-2-8052-0184-4

    SP - 323

    EP - 326

    BT - 17th Annual Symposium of the IEEE Photonics Benelux Chapter

    PB - Faculty of Engineering, University of Mons

    CY - Mons, Belgium

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    Sefünç M, Muilwijk PM, Eachambadi RT, Russo RF, van Wolferen HAGM, Sengo G et al. Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials. In 17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium: Faculty of Engineering, University of Mons. 2012. p. 323-326