Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology

S. Radovanovic, Anne J. Annema, Bram Nauta

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    13 Citations (Scopus)
    123 Downloads (Pure)

    Abstract

    The influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. Three photodiode structures are studied: nwell/p-substrate, p+/nwell/p-substrate and p+/nwell. The photodiode bandwidths are compared for λ=650 nm wavelength which is used in today's DVD optical pick-ups. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 70 MHz and 100 MHz, respectively. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be larger than the calculated intrinsic bandwidths. Thus, the parasitic diode capacitance has almost no influence on the total bandwidth of both photodiodes. By using only a p+/nwell photodiode (not connecting a substrate), the intrinsic diode bandwidth is 1 GHz. However, the electrical bandwidth limitation of this diode due to its parasitic capacitance is important and can limit the total diode bandwidth which is by approximation the lower of the physical and the electrical bandwidth. The calculated responsivity of p+/nwell photodiode is 10 dB lower than in other two defined diodes structures, requiring higher sensitivity of the subsequent electronic circuitry.
    Original languageEnglish
    Title of host publicationThe first IEEE Conference on Electron Devices and Solid-State Circuits 2003 (EDSSC 2003)
    PublisherIEEE
    Pages95-98
    Number of pages4
    ISBN (Print)0780377494
    DOIs
    Publication statusPublished - Dec 2003
    Event1st IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Hong Kong, China
    Duration: 16 Dec 200318 Dec 2003
    Conference number: 1

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference1st IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
    Abbreviated titleEDSSC 2003
    CountryChina
    CityHong Kong
    Period16/12/0318/12/03

    Keywords

    • EWI-14441
    • METIS-213453
    • IR-45872

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