Abstract
The physical properties of laser-deposited YBaCuO on Si using a single buffer layer of ZrO2 and a double layer of NiSi2 and ZrO2 have been studied. The influence of the deposition temperature has been investigated. Interface studies were performed by RBS and SAM. SEM pictures, resistivity and critical current measurements complete this study. The granularity of the films is very important for the diffusion of the Si.
Original language | English |
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Pages (from-to) | 1178-1185 |
Number of pages | 8 |
Journal | Journal of the less-common metals |
Volume | 164 |
Issue number | Part 2 |
DOIs | |
Publication status | Published - 1990 |