Physical properties and interface studies of YBa2Cu3O7 thin films deposited by laser ablation on S1 (111) with buffer layer

D.H.A. Blank, W.A.M. Aarnink, J. Flokstra, H. Rogalla, A. van Silfhout

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Abstract

The physical properties of laser-deposited YBaCuO on Si using a single buffer layer of ZrO2 and a double layer of NiSi2 and ZrO2 have been studied. The influence of the deposition temperature has been investigated. Interface studies were performed by RBS and SAM. SEM pictures, resistivity and critical current measurements complete this study. The granularity of the films is very important for the diffusion of the Si.
Original languageEnglish
Pages (from-to)1178-1185
Number of pages8
JournalJournal of the less-common metals
Volume164
Issue numberPart 2
DOIs
Publication statusPublished - 1990

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