Physical Vapor Deposition Features of Ultrathin Nanocrystals of Bi2(TexSe1- x)3

Dmitry S. Yakovlev, Dmitry S. Lvov, Olga V. Emelyanova, Pave S. Dzhumaev, Igor V. Shchetinin, Olga V. Skryabina, Sergey V. Egorov, Valery V. Ryazanov, Alexander A. Golubov, Dimitri Roditchev, Vasily S. Stolyarov*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)
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Abstract

Structural and electronic properties of ultrathin nanocrystals of chalcogenide Bi2(TexSe1-x)3were studied. The nanocrystals were formed from the parent compound Bi2Te2Se on as-grown and thermally oxidized Si(100) substrates using Ar-assisted physical vapor deposition, resulting in well-faceted single crystals several quintuple layers thick and a few hundreds nanometers large. The chemical composition and structure of the nanocrystals were analyzed by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, electron backscattering, and X-ray diffraction. The electron transport through nanocrystals connected to superconducting Nb electrodes demonstrated Josephson behavior, with the predominance of the topological channels [ Stolyarov et al. Commun. Mater., 2020, 1, 38 ]. The present paper focuses on the effect of the growth conditions on the morphology, structural, and electronic properties of nanocrystals.

Original languageEnglish
Pages (from-to)9221-9231
Number of pages11
JournalThe journal of physical chemistry letters
Volume13
Issue number39
DOIs
Publication statusPublished - 6 Oct 2022

Keywords

  • 2023 OA procedure

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