Physical Vapor Deposition Features of Ultrathin Nanocrystals of Bi2(TexSe1- x)3

Dmitry S. Yakovlev; Dmitry S. Lvov; Olga V. Emelyanova; Pave S. Dzhumaev; Igor V. Shchetinin; Olga V. Skryabina; Sergey V. Egorov; Valery V. Ryazanov; Alexander A. Golubov; Dimitri Roditchev; Vasily S. Stolyarov

doi:10.1021/acs.jpclett.2c02664

Physical Vapor Deposition Features of Ultrathin Nanocrystals of Bi₂(Te_xSe_{1- x})₃

Dmitry S. Yakovlev
, Dmitry S. Lvov
, Olga V. Emelyanova
, Pave S. Dzhumaev
, Igor V. Shchetinin
, Olga V. Skryabina
, Sergey V. Egorov
, Valery V. Ryazanov
, Alexander A. Golubov
, Dimitri Roditchev
, Vasily S. Stolyarov^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Structural and electronic properties of ultrathin nanocrystals of chalcogenide Bi₂(Te_xSe_1-x)₃were studied. The nanocrystals were formed from the parent compound Bi₂Te₂Se on as-grown and thermally oxidized Si(100) substrates using Ar-assisted physical vapor deposition, resulting in well-faceted single crystals several quintuple layers thick and a few hundreds nanometers large. The chemical composition and structure of the nanocrystals were analyzed by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, electron backscattering, and X-ray diffraction. The electron transport through nanocrystals connected to superconducting Nb electrodes demonstrated Josephson behavior, with the predominance of the topological channels [ Stolyarov et al. Commun. Mater., 2020, 1, 38 ]. The present paper focuses on the effect of the growth conditions on the morphology, structural, and electronic properties of nanocrystals.

Original language	English
Pages (from-to)	9221-9231
Number of pages	11
Journal	The journal of physical chemistry letters
Volume	13
Issue number	39
DOIs	https://doi.org/10.1021/acs.jpclett.2c02664
Publication status	Published - 6 Oct 2022

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10.1021/acs.jpclett.2c02664

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Yakovlev, D. S., Lvov, D. S., Emelyanova, O. V., Dzhumaev, P. S., Shchetinin, I. V., Skryabina, O. V., Egorov, S. V., Ryazanov, V. V., Golubov, A. A., Roditchev, D., & Stolyarov, V. S. (2022). Physical Vapor Deposition Features of Ultrathin Nanocrystals of Bi₂(Te_xSe_{1- x})₃. The journal of physical chemistry letters, 13(39), 9221-9231. https://doi.org/10.1021/acs.jpclett.2c02664

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title = "Physical Vapor Deposition Features of Ultrathin Nanocrystals of Bi2(TexSe1- x)3",

abstract = "Structural and electronic properties of ultrathin nanocrystals of chalcogenide Bi2(TexSe1-x)3were studied. The nanocrystals were formed from the parent compound Bi2Te2Se on as-grown and thermally oxidized Si(100) substrates using Ar-assisted physical vapor deposition, resulting in well-faceted single crystals several quintuple layers thick and a few hundreds nanometers large. The chemical composition and structure of the nanocrystals were analyzed by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, electron backscattering, and X-ray diffraction. The electron transport through nanocrystals connected to superconducting Nb electrodes demonstrated Josephson behavior, with the predominance of the topological channels [ Stolyarov et al. Commun. Mater., 2020, 1, 38 ]. The present paper focuses on the effect of the growth conditions on the morphology, structural, and electronic properties of nanocrystals.",

keywords = "2023 OA procedure",

author = "Yakovlev, \{Dmitry S.\} and Lvov, \{Dmitry S.\} and Emelyanova, \{Olga V.\} and Dzhumaev, \{Pave S.\} and Shchetinin, \{Igor V.\} and Skryabina, \{Olga V.\} and Egorov, \{Sergey V.\} and Ryazanov, \{Valery V.\} and Golubov, \{Alexander A.\} and Dimitri Roditchev and Stolyarov, \{Vasily S.\}",

note = "Funding Information: We gratefully acknowledge valuable discussions with S. Dizhur. We thank D. Baranov and R. Morari for their technical support. The reported study was funded by RFBR, project number 20-32-90060. The transport measurements were carried out with the support of the RSF (21-72-00140). The work of V.V.R and S.V.E. was supported by Rosatom (contract no. 868-1.3-15/15-2021). Publisher Copyright: {\textcopyright} 2022 The Authors. All rights reserved.",

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doi = "10.1021/acs.jpclett.2c02664",

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AU - Yakovlev, Dmitry S.

AU - Lvov, Dmitry S.

AU - Emelyanova, Olga V.

AU - Dzhumaev, Pave S.

AU - Shchetinin, Igor V.

AU - Skryabina, Olga V.

AU - Egorov, Sergey V.

AU - Ryazanov, Valery V.

AU - Golubov, Alexander A.

AU - Roditchev, Dimitri

AU - Stolyarov, Vasily S.

N1 - Funding Information: We gratefully acknowledge valuable discussions with S. Dizhur. We thank D. Baranov and R. Morari for their technical support. The reported study was funded by RFBR, project number 20-32-90060. The transport measurements were carried out with the support of the RSF (21-72-00140). The work of V.V.R and S.V.E. was supported by Rosatom (contract no. 868-1.3-15/15-2021). Publisher Copyright: © 2022 The Authors. All rights reserved.

PY - 2022/10/6

Y1 - 2022/10/6

N2 - Structural and electronic properties of ultrathin nanocrystals of chalcogenide Bi2(TexSe1-x)3were studied. The nanocrystals were formed from the parent compound Bi2Te2Se on as-grown and thermally oxidized Si(100) substrates using Ar-assisted physical vapor deposition, resulting in well-faceted single crystals several quintuple layers thick and a few hundreds nanometers large. The chemical composition and structure of the nanocrystals were analyzed by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, electron backscattering, and X-ray diffraction. The electron transport through nanocrystals connected to superconducting Nb electrodes demonstrated Josephson behavior, with the predominance of the topological channels [ Stolyarov et al. Commun. Mater., 2020, 1, 38 ]. The present paper focuses on the effect of the growth conditions on the morphology, structural, and electronic properties of nanocrystals.

AB - Structural and electronic properties of ultrathin nanocrystals of chalcogenide Bi2(TexSe1-x)3were studied. The nanocrystals were formed from the parent compound Bi2Te2Se on as-grown and thermally oxidized Si(100) substrates using Ar-assisted physical vapor deposition, resulting in well-faceted single crystals several quintuple layers thick and a few hundreds nanometers large. The chemical composition and structure of the nanocrystals were analyzed by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, electron backscattering, and X-ray diffraction. The electron transport through nanocrystals connected to superconducting Nb electrodes demonstrated Josephson behavior, with the predominance of the topological channels [ Stolyarov et al. Commun. Mater., 2020, 1, 38 ]. The present paper focuses on the effect of the growth conditions on the morphology, structural, and electronic properties of nanocrystals.

KW - 2023 OA procedure

UR - https://www.scopus.com/pages/publications/85139506106

U2 - 10.1021/acs.jpclett.2c02664

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M3 - Article

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AN - SCOPUS:85139506106

SN - 1948-7185

VL - 13

SP - 9221

EP - 9231

JO - The journal of physical chemistry letters

JF - The journal of physical chemistry letters

IS - 39

ER -

Physical Vapor Deposition Features of Ultrathin Nanocrystals of Bi₂(Te_xSe_{1- x})₃

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