In this work, a physics-based model is derived based on a linearization procedure for investigating the electrical, thermal and electro-thermal instability of power metal–oxide–semiconductor (MOS) transistors. The proposed model can be easily interfaced with a circuit or device simulator to perform a failure analysis, making it particularly useful for power transistors. Furthermore, it allows mapping the failure points on a three-dimensional (3D) space defined by the gate-width normalized drain current, drain voltage and junction temperature. This leads to the definition of the Safe Operating Volume (SOV), a powerful frame work for making failure predictions and determining the main root of instability (electrical, thermal or electro-thermal) in different bias and operating conditions. A comparison between the modeled and the measured SOV of silicon-on-insulator (SOI) LDMOS transistors is reported to support the validity of the proposed stability analysis.
- Power MOSFETSilicon-on-insulator (SOI)Safe Operating Area (SOA)Safe Operating Volume (SOV)Stability factorFailure function
Ferrara, A., Steeneken, P. G., Boksteen, B. K., Heringa, A., Scholten, A. J., Schmitz, J., & Hueting, R. J. E. (2015). Physics-based stability analysis of MOS transistors. Solid-state electronics, 113, 28-34. https://doi.org/10.1016/j.sse.2015.05.010