Piezoelectric strain modulation in FETs

    Research output: Contribution to journalArticleAcademicpeer-review

    17 Citations (Scopus)

    Abstract

    We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.
    Original languageEnglish
    Pages (from-to)3265-3270
    Number of pages6
    JournalIEEE transactions on electron devices
    Volume60
    Issue number10
    DOIs
    Publication statusPublished - 10 Oct 2013

    Fingerprint

    Field effect transistors
    Modulation
    Threshold voltage
    Leakage currents
    Transistors
    Electric potential

    Keywords

    • Strain
    • Piezoelectric effect
    • Power
    • subthreshold swing
    • IR-87423
    • CMOSFinFETpiezoelectric effectpowerstrainsubthreshold swing
    • CMOS
    • FinFET
    • EWI-23785

    Cite this

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    title = "Piezoelectric strain modulation in FETs",
    abstract = "We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.",
    keywords = "Strain, Piezoelectric effect, Power, subthreshold swing, IR-87423, CMOSFinFETpiezoelectric effectpowerstrainsubthreshold swing, CMOS, FinFET, EWI-23785",
    author = "{van Hemert}, T. and Hueting, {Raymond Josephus Engelbart}",
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    Piezoelectric strain modulation in FETs. / van Hemert, T.; Hueting, Raymond Josephus Engelbart.

    In: IEEE transactions on electron devices, Vol. 60, No. 10, 10.10.2013, p. 3265-3270.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Piezoelectric strain modulation in FETs

    AU - van Hemert, T.

    AU - Hueting, Raymond Josephus Engelbart

    PY - 2013/10/10

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    N2 - We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.

    AB - We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.

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    KW - Power

    KW - subthreshold swing

    KW - IR-87423

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    KW - CMOS

    KW - FinFET

    KW - EWI-23785

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