Piezoelectric strain modulation in FETs

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    24 Citations (Scopus)

    Abstract

    We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.
    Original languageEnglish
    Pages (from-to)3265-3270
    Number of pages6
    JournalIEEE transactions on electron devices
    Volume60
    Issue number10
    DOIs
    Publication statusPublished - 10 Oct 2013

    Keywords

    • Strain
    • Piezoelectric effect
    • Power
    • subthreshold swing
    • IR-87423
    • CMOSFinFETpiezoelectric effectpowerstrainsubthreshold swing
    • CMOS
    • FinFET
    • EWI-23785

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