Piezoelectric strain modulation in FETs

T. van Hemert; Raymond Josephus Engelbart Hueting

doi:10.1109/TED.2013.2274817

Piezoelectric strain modulation in FETs

T. van Hemert
, Raymond Josephus Engelbart Hueting

Research output: Contribution to journal › Article › Academic › peer-review

28 Citations (Scopus)

9 Downloads (Pure)

Abstract

We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.

Original language	English
Pages (from-to)	3265-3270
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	10
DOIs	https://doi.org/10.1109/TED.2013.2274817
Publication status	Published - 10 Oct 2013

Keywords

Strain
Piezoelectric effect
Power
subthreshold swing
IR-87423
CMOSFinFETpiezoelectric effectpowerstrainsubthreshold swing
CMOS
FinFET
EWI-23785

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10.1109/TED.2013.2274817

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abstract = "We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.",

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AU - Hueting, Raymond Josephus Engelbart

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N2 - We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.

AB - We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.

KW - Strain

KW - Piezoelectric effect

KW - Power

KW - subthreshold swing

KW - IR-87423

KW - CMOSFinFETpiezoelectric effectpowerstrainsubthreshold swing

KW - CMOS

KW - FinFET

KW - EWI-23785

U2 - 10.1109/TED.2013.2274817

DO - 10.1109/TED.2013.2274817

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Piezoelectric strain modulation in FETs

Abstract

Keywords

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