Piezoelectrically driven silicon beam force sensor

C.J. van Mullem, F.R. Blom, J.H.J. Fluitman, M. Elwenspoek

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    Abstract

    A resonant silicon beam force sensor with piezoelectric excitation and detection is being developed. The realization is based on IC and thin-film technology with ZnO as the piezoelectrical layer. The theory, realization and measurements of a bent-frame sensors are described. A frequency shift of about 3.3 times the unloaded resonance frequency f0 (f0 congruent 6 kHz) is measured with an external load force up to 0.4 N. The absolute sensitivity of the force sensor is 64 kHz/N and the full-scale sensitivity is 29 kHz/N. Using a simple model for the load-force transduction from external to sensor force, the measurements are in good agreement with the theory.
    Original languageEnglish
    Pages (from-to)379-383
    Number of pages5
    JournalSensors and actuators. A: Physical
    Volume26
    Issue number1-3
    DOIs
    Publication statusPublished - 1991
    Event4th European Conference on Solid-State Transducers, Eurosensors 1990 - Karlsruhe, Germany
    Duration: 1 Oct 19903 Oct 1990
    Conference number: 4

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