Piezoelectrically driven silicon beam force sensor

C.J. van Mullem; F.R. Blom; J.H.J. Fluitman; M. Elwenspoek

doi:10.1016/0924-4247(91)87019-Y

Piezoelectrically driven silicon beam force sensor

C.J. van Mullem, F.R. Blom, J.H.J. Fluitman, M. Elwenspoek

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Abstract

A resonant silicon beam force sensor with piezoelectric excitation and detection is being developed. The realization is based on IC and thin-film technology with ZnO as the piezoelectrical layer. The theory, realization and measurements of a bent-frame sensors are described. A frequency shift of about 3.3 times the unloaded resonance frequency f0 (f0 congruent 6 kHz) is measured with an external load force up to 0.4 N. The absolute sensitivity of the force sensor is 64 kHz/N and the full-scale sensitivity is 29 kHz/N. Using a simple model for the load-force transduction from external to sensor force, the measurements are in good agreement with the theory.

Original language	English
Pages (from-to)	379-383
Number of pages	5
Journal	Sensors and actuators. A: Physical
Volume	26
Issue number	1-3
DOIs	https://doi.org/10.1016/0924-4247(91)87019-Y
Publication status	Published - 1991
Event	4th European Conference on Solid-State Transducers, Eurosensors 1990 - Karlsruhe, Germany Duration: 1 Oct 1990 → 3 Oct 1990 Conference number: 4

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title = "Piezoelectrically driven silicon beam force sensor",

abstract = "A resonant silicon beam force sensor with piezoelectric excitation and detection is being developed. The realization is based on IC and thin-film technology with ZnO as the piezoelectrical layer. The theory, realization and measurements of a bent-frame sensors are described. A frequency shift of about 3.3 times the unloaded resonance frequency f0 (f0 congruent 6 kHz) is measured with an external load force up to 0.4 N. The absolute sensitivity of the force sensor is 64 kHz/N and the full-scale sensitivity is 29 kHz/N. Using a simple model for the load-force transduction from external to sensor force, the measurements are in good agreement with the theory.",

author = "{van Mullem}, C.J. and F.R. Blom and J.H.J. Fluitman and M. Elwenspoek",

year = "1991",

doi = "10.1016/0924-4247(91)87019-Y",

language = "English",

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pages = "379--383",

journal = "Sensors and actuators. A: Physical",

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number = "1-3",

note = "4th European Conference on Solid-State Transducers, Eurosensors 1990, Eurosensors ; Conference date: 01-10-1990 Through 03-10-1990",

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T1 - Piezoelectrically driven silicon beam force sensor

AU - van Mullem, C.J.

AU - Blom, F.R.

AU - Fluitman, J.H.J.

AU - Elwenspoek, M.

N1 - Conference code: 4

PY - 1991

Y1 - 1991

N2 - A resonant silicon beam force sensor with piezoelectric excitation and detection is being developed. The realization is based on IC and thin-film technology with ZnO as the piezoelectrical layer. The theory, realization and measurements of a bent-frame sensors are described. A frequency shift of about 3.3 times the unloaded resonance frequency f0 (f0 congruent 6 kHz) is measured with an external load force up to 0.4 N. The absolute sensitivity of the force sensor is 64 kHz/N and the full-scale sensitivity is 29 kHz/N. Using a simple model for the load-force transduction from external to sensor force, the measurements are in good agreement with the theory.

AB - A resonant silicon beam force sensor with piezoelectric excitation and detection is being developed. The realization is based on IC and thin-film technology with ZnO as the piezoelectrical layer. The theory, realization and measurements of a bent-frame sensors are described. A frequency shift of about 3.3 times the unloaded resonance frequency f0 (f0 congruent 6 kHz) is measured with an external load force up to 0.4 N. The absolute sensitivity of the force sensor is 64 kHz/N and the full-scale sensitivity is 29 kHz/N. Using a simple model for the load-force transduction from external to sensor force, the measurements are in good agreement with the theory.

U2 - 10.1016/0924-4247(91)87019-Y

DO - 10.1016/0924-4247(91)87019-Y

M3 - Article

VL - 26

SP - 379

EP - 383

JO - Sensors and actuators. A: Physical

JF - Sensors and actuators. A: Physical

SN - 0924-4247

IS - 1-3

T2 - 4th European Conference on Solid-State Transducers, Eurosensors 1990

Y2 - 1 October 1990 through 3 October 1990

ER -

Piezoelectrically driven silicon beam force sensor

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