TY - JOUR
T1 - Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions
AU - Shukla, Rajendra P.
AU - Bomer, J. G.
AU - Wijnperle, Daniel
AU - Kumar, Naveen
AU - Georgiev, Vihar P.
AU - Singh, Aruna Chandra
AU - Krishnamoorthy, Sivashankar
AU - Pascual García, César
AU - Pud, Sergii
AU - Olthuis, Wouter
N1 - Funding Information:
The authors gratefully acknowledge the financial support of the European Union’s Horizon 2020 research and innovation program under grant agreement No. 862539-Electromed-FET OPEN for funding the project. The authors also thank the staff members and process engineers at MESA+ Institute of Nanotechnology for their support during the device fabrication and seamless access to the clean room facilities. The authors also thank IDS group led by Jurriaan Schmitz for their support during the electrical characterization in the EEMC department at the University of Twente. The authors extend their thanks to Ray Hueting (IDS group) for the fruitful discussions and guidance during the fabrication of the device.
Publisher Copyright:
© 2022 by the authors.
PY - 2022/8/2
Y1 - 2022/8/2
N2 - Label-free field-effect transistor-based immunosensors are promising candidates for proteomics and peptidomics-based diagnostics and therapeutics due to their high multiplexing capability, fast response time, and ability to increase the sensor sensitivity due to the short length of peptides. In this work, planar junctionless field-effect transistor sensors (FETs) were fabricated and characterized for pH sensing. The device with SiO2 gate oxide has shown voltage sensitivity of 41.8 ± 1.4, 39.9 ± 1.4, 39.0 ± 1.1, and 37.6 ± 1.0 mV/pH for constant drain currents of 5, 10, 20, and 50 nA, respectively, with a drain to source voltage of 0.05 V. The drift analysis shows a stability over time of -18 nA/h (pH 7.75), -3.5 nA/h (pH 6.84), -0.5 nA/h (pH 4.91), 0.5 nA/h (pH 3.43), corresponding to a pH drift of -0.45, -0.09, -0.01, and 0.01 per h. Theoretical modeling and simulation resulted in a mean value of the surface states of 3.8 × 1015/cm2 with a standard deviation of 3.6 × 1015/cm2. We have experimentally verified the number of surface sites due to APTES, peptide, and protein immobilization, which is in line with the theoretical calculations for FETs to be used for detecting peptide-protein interactions for future applications.
AB - Label-free field-effect transistor-based immunosensors are promising candidates for proteomics and peptidomics-based diagnostics and therapeutics due to their high multiplexing capability, fast response time, and ability to increase the sensor sensitivity due to the short length of peptides. In this work, planar junctionless field-effect transistor sensors (FETs) were fabricated and characterized for pH sensing. The device with SiO2 gate oxide has shown voltage sensitivity of 41.8 ± 1.4, 39.9 ± 1.4, 39.0 ± 1.1, and 37.6 ± 1.0 mV/pH for constant drain currents of 5, 10, 20, and 50 nA, respectively, with a drain to source voltage of 0.05 V. The drift analysis shows a stability over time of -18 nA/h (pH 7.75), -3.5 nA/h (pH 6.84), -0.5 nA/h (pH 4.91), 0.5 nA/h (pH 3.43), corresponding to a pH drift of -0.45, -0.09, -0.01, and 0.01 per h. Theoretical modeling and simulation resulted in a mean value of the surface states of 3.8 × 1015/cm2 with a standard deviation of 3.6 × 1015/cm2. We have experimentally verified the number of surface sites due to APTES, peptide, and protein immobilization, which is in line with the theoretical calculations for FETs to be used for detecting peptide-protein interactions for future applications.
KW - diagnostics
KW - peptide-protein interaction
KW - peptidomics
KW - pH sensor
KW - planar junctionless FETs
KW - proteomics
KW - therapeutics
UR - http://www.scopus.com/inward/record.url?scp=85136342355&partnerID=8YFLogxK
U2 - 10.3390/s22155783
DO - 10.3390/s22155783
M3 - Article
C2 - 35957340
AN - SCOPUS:85136342355
VL - 22
JO - Sensors (Switzerland)
JF - Sensors (Switzerland)
SN - 1424-8220
IS - 15
M1 - 5783
ER -