Plasma Charging Damage Induced by a Power Ramp Down Step in the end of Plasma Enhanced Chemical Vapour Deposition (PECVD) Process

Zhichun Wang, J.G.G. Ackaert, Cora Salm, F.G. Kuper, K. Bessemans, E. De Backer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	Undefined
Title of host publication	Proceedings of Semiconductor Advances for Future Electronics SAFE 2003
Pages	766-770
Number of pages	5
Publication status	Published - 25 Nov 2003

Keywords

@inproceedings{a1f9596cb173427aa49cf725ce89b9c6,

title = "Plasma Charging Damage Induced by a Power Ramp Down Step in the end of Plasma Enhanced Chemical Vapour Deposition (PECVD) Process",

keywords = "METIS-213263",

author = "Zhichun Wang and J.G.G. Ackaert and Cora Salm and F.G. Kuper and K. Bessemans and {De Backer}, E.",

year = "2003",

month = nov,

day = "25",

language = "Undefined",

pages = "766--770",

booktitle = "Proceedings of Semiconductor Advances for Future Electronics SAFE 2003",

}

Proceedings of Semiconductor Advances for Future Electronics SAFE 2003. 2003. p. 766-770.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Plasma Charging Damage Induced by a Power Ramp Down Step in the end of Plasma Enhanced Chemical Vapour Deposition (PECVD) Process

AU - Wang, Zhichun

AU - Ackaert, J.G.G.

AU - Salm, Cora

AU - Kuper, F.G.

AU - Bessemans, K.

AU - De Backer, E.

PY - 2003/11/25

Y1 - 2003/11/25

KW - METIS-213263

M3 - Conference contribution

SP - 766

EP - 770

BT - Proceedings of Semiconductor Advances for Future Electronics SAFE 2003

ER -